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首页> 外文期刊>Physica, B. Condensed Matter >Interaction between self-interstitials and group-III acceptors in electron-irradiated p-type Si: dopant dependence of Watkins replacement reaction
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Interaction between self-interstitials and group-III acceptors in electron-irradiated p-type Si: dopant dependence of Watkins replacement reaction

机译：电子辐照的p型Si中自填隙与III型受体之间的相互作用：沃特金斯置换反应的掺杂依赖性

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摘要

The rate of the Watkins replacement reaction, in which changes of occupation sites between self-interstitials (I) and substitutional group-III impurities (III(s)) in Si crystals occur, was studied from the measurement of optical absorption intensity due to IH2 (a complex of one I and two H atoms). If the IH2 intensity depends on the species of group-III impurities under the same irradiation dose, the weaker intensity means larger displacement rate. After hydrogenation, specimens were irradiated at room temperature. The IH2 intensity was determined from optical absorption measurement at 7 K. The IH2 intensity depended on the B concentration ([B]), being smaller as [B] became larger. It also depended on the species of group-III dopants. (C) 2003 Elsevier B.V. All rights reserved. [References: 7]
机译：通过测量由IH2引起的光吸收强度，研究了Watkins置换反应的速率，在该速率中发生了Si晶体中自填隙（I）和取代III型杂质（III（s））之间的占据位点的变化。 （一个I和两个H原子的复合物）。如果在相同的照射剂量下IH2强度取决于III类杂质的种类，则强度越弱意味着位移速率越大。氢化后，在室温下辐照样品。 IH2强度由7 K下的光吸收测量确定。IH2强度取决于B浓度（[B]），[B]越大则越小。它也取决于III族掺杂剂的种类。 （C）2003 Elsevier B.V.保留所有权利。 [参考：7]

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