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首页> 外文期刊>Physica, B. Condensed Matter >Surface and bulk structural changes in InP single crystals induced by 350 Mev Au ion irradiation
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Surface and bulk structural changes in InP single crystals induced by 350 Mev Au ion irradiation

机译：350 Mev Au离子辐照引起的InP单晶表面和整体结构变化

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摘要

InP (0 0 1) wafers were irradiated at room temperature and at liquid nitrogen temperature with swift An ions. The bulk and near surface structure was investigated by means of X-ray grazing incidence diffraction and measurements at the (0 0 2) Bragg reflection. While irradiation at room temperature with 350 MeV Au ions induced amorphization at a fluence of Phit = 1 x 10(13) Au/cm(2), cooling to liquid nitrogen temperature during irradiation reduces the defect generation. A threshold value for complete bulk amorphization of Phit = 6 x 10(12) Au/cm(2) was observed. The near surface lattice structure is less affected by the irradiation than the bulk. (C) 2004 Elsevier B.V. All rights reserved.
机译：在室温和液氮温度下用快速的An离子辐照InP（0 0 1）晶片。通过X射线掠入射衍射和在（0 0 2）布拉格反射下的测量研究了本体和近表面结构。虽然在室温下用350 MeV Au离子进行辐照会在Phit = 1 x 10（13）Au / cm（2）的通量下引起非晶化，但在辐照期间冷却至液氮温度会减少缺陷的产生。观察到Phit完全本体非晶化的阈值= 6 x 10（12）Au / cm（2）。与本体相比，近表面晶格结构受辐射的影响较小。 （C）2004 Elsevier B.V.保留所有权利。

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