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首页> 外文期刊>Physica, B. Condensed Matter >Photoluminescence from Si/Si1-xGex single quantum wells in high magnetic fields: localized and free exciton recombination
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Photoluminescence from Si/Si1-xGex single quantum wells in high magnetic fields: localized and free exciton recombination

机译：Si / Si1-xGex单量子阱在强磁场中的光致发光：局部和自由激子复合

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摘要

We have performed photoluminescence measurements on three Si/Si0.76Ge0.24 Single quantum wells with well widths of 2.5, 4.8 and 8.5 nm in magnetic fields up to B = 20 T. For the excitation and detection of the photoluminescence a large core (0.6 mm) glass fiber was used, which provides sufficient signal intensities at moderate excitation power densities. The magnetic field leads to a luminescence peak splitting and rather large diamagnetic shifts in the wider quantum wells. The increase of the diamagnetic shift with well width indicates a strong reduction of the exciton binding energy, which is consistent with the previously proposed type II band alignment in these quantum wells, and we interpret the peak splitting in terms of localized and free exciton recombination. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 13]
机译：我们已经在3个Si / Si0.76Ge0.24单量子阱中进行了光致发光测量，这些阱的宽度分别为2.5、4.8和8.5 nm，磁场强度最高为B = 20T。为了激发和检测光致发光，需要一个大核（0.6毫米）玻璃纤维被使用，它在中等激发功率密度下提供了足够的信号强度。磁场导致更宽量子阱中的发光峰分裂和相当大的反磁性位移。反磁位移随阱宽度的增加表明激子结合能的强烈降低，这与这些量子阱中先前提出的II型能带排列相一致，并且我们根据局部和自由激子复合来解释峰分裂。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：13]

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