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首页> 外文期刊>Physica, C. Superconductivity and its applications >Investigations of thick YBCO coated conductor with high critical current using IBAD-PLD method
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Investigations of thick YBCO coated conductor with high critical current using IBAD-PLD method

机译：使用IBAD-PLD方法研究高临界电流的厚YBCO涂层导体

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Thick YBCO film were deposited by the PLD method on the self-epitaxial CeO2 buffered substrate: a CeO2 cap layer was deposited by the PLD method on Gd2Zr2O7 buffered Hastelloy tape by the MAD method and highly texturing up to 4 degrees was obtained. We have investigated the Delta phi, R-a value, amount of existing a-axis oriented crystals, and I-c of YBCO coated conductor with increasing YBCO thickness. To obtain YBCO coated conductors with high Ic, good in-plane texturing of the CeO2 layer is required. However, the value of I-c saturated at a certain YBCO thickness, critical thickness, d(c). As the YBCO thickness increased, the surface morphology became much rougher. Consequently, the surface temperature of YBCO becomes lower and the amount of a-axis oriented crystals in YBCO increased. Then, thick YBCO film exhibited dc. To solve this problem, we fabricated YBCO by multi-layer deposition using the Reel-to-Reel 2 system, which was carried out at various temperatures. This process increases J(c) from 0.54 to 0.89 A/cm(2). (c) 2005 Elsevier B.V. All rights reserved.
机译：通过PLD方法在自外延CeO2缓冲基板上沉积厚的YBCO膜：通过MAD方法，通过PLD方法在Gd2Zr2O7缓冲Hastelloy胶带上沉积CeO2盖层，并获得高达4度的高度纹理化。我们研究了随着ybco厚度的增加，δphi，R-a值，现有a轴取向晶体的数量以及YBCO涂层导体的I-c。为了获得具有高Ic的YBCO涂层导体，需要对CeO2层进行良好的面内纹理化处理。但是，I-c值在某个YBCO厚度（临界厚度d（c））下达到饱和。随着YBCO厚度的增加，表面形态变得更加粗糙。因此，YBCO的表面温度降低，并且YBCO中的a轴取向晶体的数量增加。然后，厚的YBCO膜表现出dc。为了解决这个问题，我们使用Reel-to-Reel 2系统通过多层沉积工艺在不同温度下进行了YBCO的制备。此过程将J（c）从0.54增加到0.89 A / cm（2）。 （c）2005 Elsevier B.V.保留所有权利。

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