CHARGE TRANSFER IN Fe /Ga As(001)INTERFACE

V. CRISAN

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CHARGE TRANSFER IN Fe /Ga As(001)INTERFACE

机译：Fe / Ga As（001）界面中的电荷转移

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The KKR band structure and the pseudopotential moleculardynamic calculations have revealed important interlayer (metal-semiconductor) aswell as intralayer (between Fe atoms) charge transfer. Due to the different atomicenvironment of the Fe atoms at the interface they became nonequivalent. It is theintralayer charge transfer responsible of the antiferromagnetic ordering of Femagnetic moments at the interface.

机译：KKR能带结构和假电位分子动力学计算揭示了重要的中间层（金属半导体）以及内部层（Fe原子之间）的电荷转移。由于界面处Fe原子的原子环境不同，它们变得不等价。它是层内电荷转移，负责界面处铁磁矩的反铁磁排序。

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《Studia Universitatis Babes-Bolyai. Series Physica》 |2009年第1期|共4页
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V. CRISAN;
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原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
Single crystals films; charge transfer; intralayer charge;

机译：单晶膜;电荷转移;层内电荷;

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1. CHARGE TRANSFER IN Fe /Ga As(001)INTERFACE [J] . V. CRISAN Studia Universitatis Babes-Bolyai. Series Physica . 2009,第1期

机译：Fe / Ga As（001）界面中的电荷转移
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CHARGE TRANSFER IN Fe /Ga As(001)INTERFACE

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