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首页> 外文期刊>Physica, C. Superconductivity and its applications >Creating homogeneous depth profiles in YBaCuO films by ion beam implantation for uniform supression of T-c
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Creating homogeneous depth profiles in YBaCuO films by ion beam implantation for uniform supression of T-c

机译：通过离子束注入在YBCO膜中创建均匀的深度轮廓，以均匀抑制T-c

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摘要

Critical temperature depth profiles were calculated for single and multiple energy oxygen ion implantation of YBaCuO thin films. Using the TRIM98 code and the diffusion equation the changes of the profiles during an annealing between 150 and 300 C were obtained. The results are in reasonable agreement with the experimental data. Experimentally we investigated further implantation of O-. Ne+ and Al+ with a homogeneous implantation profile. The critical temperature is depressed by the created defects and in the case of Al also by substitution of Cu. For O+ and Ne+ implantation the depression of they critical temperature is diminished by an annealing process. Depending on the quality of the films. T, reaches in some cases the values of the unimplanted samples. For Al- the critical temperature changes less by the annealing process compared to the O- or Ne+ implantations and does not reach the starting values. Some results of an annealing made by laser treatment are presented. too. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 23]
机译：计算了YBaCuO薄膜的单能和多能氧离子注入的临界温度深度曲线。使用TRIM98代码和扩散方程，可以得出在150到300 C之间的退火过程中轮廓的变化。结果与实验数据基本吻合。实验上，我们研究了O-的进一步植入。具有均匀注入轮廓的Ne +和Al +。通过产生的缺陷降低了临界温度，在Al的情况下，也通过取代Cu降低了临界温度。对于O +和Ne +注入，通过退火工艺可以降低临界温度的降低。取决于电影的质量。在某些情况下，T达到未植入样品的值。对于Al-，与O-或Ne +注入相比，通过退火工艺的临界温度变化较小，并且未达到起始值。给出了通过激光处理进行退火的一些结果。太。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：23]

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