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Factors affecting the optimal design of high-T-c superconductors - the pseudogap and critical doping

机译:影响高T-c超导体最佳设计的因素-伪间隙和临界掺杂

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摘要

The impact of the normal-state pseudogap, present in all optimal and underdoped HTS cuprates, on critical currents and critical temperature is surveyed. With the opening of the pseudogap around a doping state of p approximate to 0.19 the condensation energy and superfluid density are rapidly suppressed due to reduction in the normal-state spectral weight. Even by optimal doping (p approximate to 0.16) these measures of the 'strength' of superconductivity are diminished by up to 40%. This results in a sharp reduction in critical currents and irreversibility field, respectively. The optimal doping state where these properties are maximised is therefore not at maximum T-c but in the lightly overdoped region where the pseudogap energy falls to zero at p approximate to 0.19. The presence of impurities and grain boundaries further heightens these effects. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 34]
机译:调查了所有最佳和未掺杂的HTS铜酸盐中存在的正常状态伪间隙对临界电流和临界温度的影响。随着伪间隙在掺杂状态p的附近接近0.19,由于常态光谱权重的降低,缩合能和超流体密度被迅速抑制。即使通过最佳掺杂(p大约为0.16),这些超导“强度”的度量也可减少多达40%。这分别导致临界电流和不可逆场的急剧减小。因此,使这些特性最大化的最佳掺杂状态不是在最大T-c处,而是在伪间隙能量在p接近0.19时降至零的轻度掺杂区域中。杂质和晶界的存在进一步增强了这些效果。 (C)2000 Elsevier Science B.V.保留所有权利。 [参考:34]

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