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首页> 外文期刊>Physica, C. Superconductivity and its applications >High-current Y-Ba-Cu-O superconducting films by metal organic chemical vapor deposition on flexible metal substrates
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High-current Y-Ba-Cu-O superconducting films by metal organic chemical vapor deposition on flexible metal substrates

机译：通过在柔性金属基板上进行金属有机化学气相沉积的高电流Y-Ba-Cu-O超导膜

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A metal organic chemical vapor deposition (MOCVD) method has been developed to achieve high currents in Y-Ba-Cu-O (YBCO) superconducting films deposited on biaxially textured buffer layers on polycrystalline (untextured) flexible metal substrates. Optimization of the MOCVD process parameters has yielded critical currents (I-c) greater than 50 A and critical current densities (J(c)) higher than 1 MA/cm(2) at 77 K in self-field conditions. High values of critical currents were found to be maintained also in the presence of a magnetic field. At 75 K, with the magnetic field perpendicular to the c-axis (B perpendicular to c), J(c) values of 570,000 A/cm(2) (I-c = 20 A) and 240,000 A/cm(2) (I-c = 8.5 A) were achieved in fields of 1 and 5 T respectively. With the magnetic field parallel to the c-axis (B parallel to c), J(c) values of 215,000 A/cm(2) (I-c = 7.6 A) and 100,000 A/cm(2) (I-c = 3.6 A) were achieved in fields of 1 and 2.5 T respectively. At 64 K, the J(c) values were 1.2 MA/cm(2) (I-c = 43 A) and 770,000 A/cm(2) (I-c = 27 A) at 2 and 5 T respectively in the B perpendicular to c orientation. In the B parallel to c orientation, the J(c) values were 680,000 A/cm(2) (I-c = 23.7 A), 520,000 A/cm(2) (I-c = 18.2 A) and 300,000 A/cm(2) (I-c = 10.6 A) at 1, 2, and 5 T respectively. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 18]
机译：已经开发了一种金属有机化学气相沉积（MOCVD）方法，以在沉积在多晶（非织构）柔性金属基板上的双轴织构缓冲层上的Y-Ba-Cu-O（YBCO）超导膜中实现高电流。 MOCVD工艺参数的优化产生了大于50 A的临界电流（I-c），并且在自电场条件下在77 K时产生的临界电流密度（J（c））大于1 MA / cm（2）。发现在存在磁场的情况下也可以维持高临界电流值。在75 K下，磁场垂直于c轴（B垂直于c），J（c）值分别为570,000 A / cm（2）（Ic = 20 A）和240,000 A / cm（2）（Ic分别在1 T和5 T的磁场中获得了8.5 A）的电流。在磁场平行于c轴（B平行于c）的情况下，J（c）值为215,000 A / cm（2）（Ic = 7.6 A）和100,000 A / cm（2）（Ic = 3.6 A）分别在1和2.5 T的磁场中实现。在64 K时，垂直于c的B在2和5 T下的J（c）值分别为1.2 MA / cm（2）（Ic = 43 A）和770,000 A / cm（2）（Ic = 27 A）方向。在平行于c方向的B中，J（c）值为680,000 A / cm（2）（Ic = 23.7 A），520,000 A / cm（2）（Ic = 18.2 A）和300,000 A / cm（2） （Ic = 10.6 A）分别在1，2和5 T下。 （C）2000 Elsevier Science B.V.保留所有权利。 [参考：18]

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