首页> 外文期刊>Physica, C. Superconductivity and its applications >FLUX PENETRATION IN BI(2212) SINGLE CRYSTALS AT LOW MAGNETIC FIELDS
【24h】

FLUX PENETRATION IN BI(2212) SINGLE CRYSTALS AT LOW MAGNETIC FIELDS

机译:低磁场下Bi(2212)单晶的磁通量渗透

获取原文
获取原文并翻译 | 示例
           

摘要

We report high-resolution measurements of the magnetization for a series of Bi(2212) single crystals during continuous heating up in a low magnetic field after zero-field-cooling. We find a thermally activated behavior for the first flux penetration with a thermal activation energy decreasing logarithmically with increasing held below an internal field of about 150 Oe and being nearly field independent at higher fields. This behavior suggests that thermal activation of pancake vortices across Bean-Livingston barriers at the surface determines the first flux penetration at low fields, crossing over to a flux-flow process determining the flux penetration at higher fields. In the flux-how regime we can resolve large and irregular jumps in the magnetization, indicative of a self-organized-critical (SOC) state. [References: 31]
机译:我们报告了一系列Bi(2212)单晶的磁化强度的高分辨率测量,该磁场在零场冷却后在低磁场中连续升温。我们发现第一通量穿透的热激活行为是热激活能量对数地降低,并随着增加而保持在大约150 Oe的内部场以下,而在较高场几乎与场无关。这种现象表明,越过表面的Bean-Livingston势垒的薄煎饼涡流的热活化决定了低磁场下的第一通量渗透,越过了决定高磁场下的通量渗透的通量流过程。在磁通量方式中,我们可以解决磁化过程中的大而无规律的跳跃,这表明存在自组织临界(SOC)状态。 [参考:31]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号