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POSITRON ANNIHILATION STUDY OF Y1-XPRXBA2CU3O7

机译:Y1-XPRXBA2CU3O7的正电子AN没研究

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摘要

A positron annihilation study of Y1-xPrxBa2Cu3O7 was performed. The results showed that charge transfer between the CuO2 planes and 1D CuO chains upon Pr doping, as proposed in the Literature, did not occur. Pr doping suppressed the anomaly of positron annihilation lifetime near and below T-c which has been observed in YBa2Cu3O7. The perfection of the 1D CuO chains was reduced by Pr doping and this may be partly responsible for the increase of resistivity with Pr doping, and finally the semiconducting behaviour of DC resistivity in Y1-xPrxBa2Cu3O7 with x > 0.6. [References: 27]
机译:进行了Y1-xPrxBa2Cu3O7的正电子an灭研究。结果表明,如文献中所提出的,在Pr掺杂时,CuO2平面和一维CuO链之间没有发生电荷转移。 Pr掺杂抑制了在YBa2Cu3O7中观察到的接近和低于T-c的正电子an灭寿命异常。一维CuO链的完美度因Pr掺杂而降低,这可能部分归因于Pr掺杂的电阻率增加,最终导致x大于0.6的Y1-xPrxBa2Cu3O7中DC电阻率的半导体行为。 [参考:27]

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