Epitaxial CeO2/MgO buffer layers on cubic textured Ni substrates for superconducting tapes

Yang J.; Hu GY.; Shi K.; Yuan GS.; Gu HW.

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Epitaxial CeO2/MgO buffer layers on cubic textured Ni substrates for superconducting tapes

机译：超导带的立方织构镍衬底上的外延CeO2 / MgO缓冲层

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Reported here is a novel epitaxial buffer layer configuration combined with MgO and CeO2 on biaxially texture Mi substrates for high temperature superconducting (HTS) tapes. The hetero-epitaxial CeO2/MgO/Ni structure was grown by magnetron sputtering method. After formation of the buffer layers, 0-20 and phi scans of x-ray diffraction were used to measure the film in-plane and out-plane orientation, respectively. The deposited CeO2 and MgO buffer layers showed good in-plane alignment. [References: 3]

机译：此处报道的是一种新颖的外延缓冲层配置，在高温超导（HTS）胶带的双轴织构Mi基板上结合了MgO和CeO2。通过磁控溅射法生长异质外延CeO2 / MgO / Ni结构。在形成缓冲层之后，使用X射线衍射的0-20和phi扫描分别测量膜的面内和面外取向。沉积的CeO2和MgO缓冲层显示出良好的面内排列。 [参考：3]

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《Physica, C. Superconductivity and its applications》 |2000年第4期|共2页
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Yang J.; Hu GY.; Shi K.; Yuan GS.; Gu HW.;
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1. Epitaxial CeO2/MgO buffer layers on cubic textured Ni substrates for superconducting tapes [J] . Yang J., Hu GY., Shi K., Physica, C. Superconductivity and its applications . 2000,第Pta4期

机译：超导带的立方织构镍衬底上的外延CeO2 / MgO缓冲层
2. Textured tape substrates made of ternary alloys based on Cu-40%Ni-Me constantan for epitaxial deposition of buffer and superconducting layers [J] . Schastlivtsev V. M., Khlebnikova Yu. V., Rodionov D. P., Doklady Chemistry . 2016,第Pta1期

机译：由基于Cu-40％Ni-Me康斯坦丁的三元合金制成的带纹理的带基材，用于外延沉积缓冲层和超导层
3. Laser-ablated epitaxial LaAlO3 buffer layers on biaxially textured Ni substrates for superconducting tapes [J] . Carlson CM., Parilla PA., Ginley DS., Physica, C. Superconductivity and its applications . 1998,第1a2期

机译：用于超导带的双轴织构Ni衬底上的激光烧蚀外延LaAlO3缓冲层
4. High-J{sub}c YBCO coatings on reel-to-reel dip-coated Gd{sub}2O{sub}3 seed buffer layers epitaxially fabricated on biaxially textured Ni and Ni-(3atW-1.7atFe)alloy tapes [C] . Tolga Aytug, M. Paranthaman, S. Sathyamurthy, Symposium E, "Materials for high-temperature superconductor technologies" . 2002

机译：在卷轴到卷轴浸涂的Gd {sub} 2O {sub} 2o {sub} 3上外延织物的三种种子缓冲层。在双轴纹理Ni和Ni-（3at％w-1.7at％Fe）合金上外延制造的种子缓冲层磁带
5. Zirconium nitride/aluminum nitride buffer layers for epitaxial growth of (indium,gallium) nitride on silicon substrates. [D] . Oliver, Mark H. 2008

机译：氮化锆/氮化铝缓冲层，用于在硅基板上外延生长（铟，镓）氮化物。
6. Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates [O] . Wael M Mohammed, Igor V Yanilkin, Amir I Gumarov, 2020

机译：MgO（001）衬底上的薄膜PdFe / VN和VN / PdFe双层薄膜的外延生长和超导性能
7. Oxide Buffer Layers and YBa2Cu3O7 Superconducting Material Epitaxially Grown on Cube Textured Ni Tape [O] . Toshiya Doi, Kazuhiro Kawahara, Yoshinori Hakuraku, 2007

机译：氧化物缓冲层和YBA2Cu3O7超导材料在立方体纹理Ni磁带上延伸
8. Epitaxial Growth of Y(sub 2/sub O/sub 3) Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process [R] . Beach, D. B. , Chirayil, T. G. , Christen, D. K. , 1999

机译：溶胶 - 凝胶法在双轴织构Ni（100）衬底上外延生长Y（sub 2 / sub O / sub 3）缓冲层

Epitaxial CeO2/MgO buffer layers on cubic textured Ni substrates for superconducting tapes

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