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首页> 外文期刊>Physica, C. Superconductivity and its applications >Growth mechanism of RE-Ba-Cu-O film on MgO substrate by liquid phase epitaxy
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Growth mechanism of RE-Ba-Cu-O film on MgO substrate by liquid phase epitaxy

机译：液相外延法在MgO衬底上制备RE-Ba-Cu-O薄膜

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摘要

Hetero-epitaxial growth of YBa2Cu3Oy (YBCO) crystals on MgO substrates has been investigated by comparing with the homo-epitaxial growth on a YBCO substrate, in order to clarify the initial growth mechanism of the liquid phase epitaxy (LPE). It was found that the slope angle of the growth grain varied with growing in the initial stage of the LPE growth. In the case of the homo-epitaxial growth, the slope angle decreased with growing the crystal. On the other hand, the slope angle increased with growing the crystal in the hetero-epitaxial growth. These phenomena could be explained by considering the difference in step-advancing rates between on the hetero- and homo-epitaxial interfaces. It was found that the hetero-epitaxial interface strongly affected the quality of the LPE film. The guideline for the high quality LPE film by the hetero-epitaxial growth could be obtained. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 9]
机译：通过与YBCO衬底上的同质外延生长相比较，研究了YBa2Cu3Oy（YBCO）晶体在MgO衬底上的异质外延生长，以阐明液相外延（LPE）的初始生长机理。发现在LPE生长的初始阶段，生长晶粒的倾斜角随生长而变化。在同质外延生长的情况下，倾斜角随着晶体的生长而减小。另一方面，在异质外延生长中，倾斜角随着晶体的生长而增加。这些现象可以通过考虑异质外延界面和同质外延界面之间步进速度的差异来解释。发现异质外延界面强烈影响LPE膜的质量。可以得到通过异质外延生长获得高质量LPE薄膜的指南。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：9]

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