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Critical current density and related microstructures of TFA-MOD YBCO coated conductors

机译:TFA-MOD YBCO涂层导体的临界电流密度和相关的微观结构

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Metalorganic deposition process using trifluoroacetate (TFA-MOD) processed YBCO film on LaAlO3 and IBAD (YSZ/Hastelloy) substrate exhibited high critical current density, J(c), at 77.3 K. The obtained J(c) values at 0 T were 7 and 1.7 MA/cm(2) for LaAlO3 and CeO2 buffered IBAD, respectively. High J(c) values over 10(5) A/cm(2) were maintained up to 4 T (B parallel toc-axis) for the LaAlO3 substrate and up to 3 T (B parallel toc-axis) for the CeO2 buffered IBAD substrate. These results imply that TFA-MOD with simple fabrication process is very promising for the practical YBCO coated conductor. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 9]
机译:在LaAlO3和IBAD(YSZ / Hastelloy)基板上使用三氟乙酸盐(TFA-MOD)处理的YBCO膜的金属有机沉积工艺在77.3 K时显示出高临界电流密度J(c)。在0 T时获得的J(c)值为7 LaAlO3和CeO2缓冲的IBAD分别为1.7 MA / cm(2)。对于LaAlO3基板,最高J(c)值超过10(5)A / cm(2)保持高达4 T(平行于B轴),对于CeO2缓冲液,高达3 T(平行于B轴) IBAD基材。这些结果表明具有简单制造工艺的TFA-MOD对于实际的YBCO涂层导体是非常有前途的。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:9]

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