Defects in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals

Jia LS.; Yang W.; Chen XL.; Yan XL.

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Defects in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals

机译：Nd2CuO4和Nd1.815Ce0.185CuO4单晶中的缺陷

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We describe here four kinds of defects found in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals grown by the traveling solvent floating zone method. These defects include: (1) cracks, (2) inclusions, (3) gas bubbles and (4) uneven distribution of Ce (4+). The formation mechanism of these defects and the measures of eliminating these defects are discussed. It is thought that the preparation of raw materials and stringent growth conditions are necessary to obtain high quality of Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals. (C) 2003 Elsevier B.V. All rights reserved. [References: 11]

机译：我们在此描述通过移动溶剂浮区法生长的Nd2CuO4和Nd1.815Ce0.185CuO4单晶中发现的四种缺陷。这些缺陷包括：（1）裂纹，（2）夹杂物，（3）气泡和（4）Ce（4+）的不均匀分布。讨论了这些缺陷的形成机理以及消除这些缺陷的措施。人们认为原料的制备和严格的生长条件对于获得高质量的Nd2CuO4和Nd1.815Ce0.185CuO4单晶是必要的。（C）2003 Elsevier B.V.保留所有权利。 [参考：11]

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《Physica, C. Superconductivity and its applications》 |2004年第4期|共5页
作者
Jia LS.; Yang W.; Chen XL.; Yan XL.;
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正文语种 eng
中图分类超导电性;
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Defects; Nd2cuo4 single crystal; Nd1; 815ce0; 185cuo4 single crystal; Tsfz method; Hall-coefficient; Transport; Carriers; Growth;

机译：缺陷;Nd2cuo4单晶;Nd1;815ce0;185cuo4单晶;Tsfz法;霍尔系数;运输;载体;生长;

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机译：Nd2CuO4和Nd1.815Ce0.185CuO4单晶中的缺陷
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Defects in Nd2CuO4 and Nd1.815Ce0.185CuO4 single crystals

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