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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method
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Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method

机译：通过SILAR方法生长的CdS，Cd0.5In0.5S和In2S3薄膜的结构，光学和电学性质

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摘要

CdS, Cd0.5In0.5S and In2S3 thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on a glass substrate at room temperature. These films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical and electrical properties of these films have been investigated as a function of temperature. The absorption measurements were carried out in the temperature range 10-320 K with a step of 10 K. The band gap energies 'E-g' for CdS, Cd0.5In0.5S and In2S3 thin films have been found as 2.38, 2.52 and 2.63 eV at 10 K, respectively. The electrical resistivity of CdS, Cd0.5In0.5S and In2S3 thin films have been determined using a 'dc' two-probe method, in the temperature range of 300-450 K. The electrical resistivity values have been calculated at 300 K, as 2 x 10(6) Omega cm, 3.5 x 10(7) Omega cm and 1.5 x 10(7) Omega cm for CdS, Cd0.5In0.5S and In2S3, respectively. This is one of the first studies which led to deposition of the CdInS thin films by using the SILAR method. (C) 2007 Elsevier B.V. All rights reserved.
机译：CdS，Cd0.5In0.5S和In2S3薄膜在室温下通过连续离子层吸附和反应（SILAR）方法在玻璃基板上生长。这些膜通过X射线衍射（XRD）和扫描电子显微镜（SEM）表征。已经研究了这些膜的光学和电学性质随温度的变化。吸收测量在10-320 K的温度范围内以10 K的步长进行。发现CdS，Cd0.5In0.5S和In2S3薄膜的带隙能量'Eg'为2.38、2.52和2.63 eV分别为10 K CdS，Cd0.5In0.5S和In2S3薄膜的电阻率已通过“ dc”双探针法在300-450 K的温度范围内确定。电阻率值在300 K下计算，如下对于CdS，Cd0.5In0.5S和In2S3，分别为2 x 10（6）Ωcm，3.5 x 10（7）Ωcm和1.5 x 10（7）Ωcm。这是最早的研究之一，该研究导致使用SILAR方法沉积CdInS薄膜。 （C）2007 Elsevier B.V.保留所有权利。

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