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Optical Properties of Quantum Wells Grown upon Gas Source Molecular-Beam EpitaxyLow-Temperature Buffers

机译：气源分子束外延低温缓冲液生长量子阱的光学特性

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GaAs/AlGaAs quantum wells are grown on gas source molecular-beam epitaxy (GSMBE)grown low-temperature buffers (LTB). Changes in LTB growth conditions produce noticeable changes in photoluminescence (PL) intensity and linewidths of the quantum wells. Layers grown at low temperatures (200-300C) incorporate excess arsenic which outdiffuses during subsequent quantum growth. Reflection high energy electron diffraction and PL results are utilized to show strain and arsenic outdiffusion from the LTBs. Excess arsenic incorporation during the growth of GaAs at low temperatures is explained in terms of the association Traction of As2 to form As4 at the surface. The optimum V/111 ratio for growth of LTB by GSMBE is discussed.

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Shiralagi, K. T.; Puechner, R. A.; Choi, K. Y.; Droopad, R.; Maracas, G. N.;
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年度 1991
页码
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Electron diffraction; High energy; Intensity; Layers; Low temperature; Opticalproperties; Ratios; Reflection; Reprints; Photoluminescence; Epitaxial growth; Crystal growth; Gallium arsenides;

机译：电子衍射;高能;强度;层;低温;光学性质;比率;反射;重印;光致发光;外延生长;晶体生长;砷化镓;

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专利

1. Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A(III)N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy [J] . Seredin P. V, Lenshin A. S., Zolotukhin D. S., Semiconductors . 2019,第7期

机译：纳米多孔硅缓冲层对血浆激活分子束外延生长的（III）N / POR-SI异质结构的原子和电子结构和光学性质的影响
2. Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy [J] . I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, Semiconductors . 2004,第3期

机译：分子束外延生长的InGaAsN量子阱中具有InAs量子点的异质结构的结构和光学性质
3. Optical properties of digital-alloy In_(0.49)(Ga_(1-z)Al_z)_(0.51)P/GaAs and InGaP/In_(0.49)(Ga_(1-z)Al_z)_(0.51)P multi-quantum wells grown by molecular-beam epitaxy [J] . J.M. Kim, C.Y. Park, Y.T. Lee, Journal of Crystal Growth . 2005,第3a4期

机译：数字合金In_（0.49）（Ga_（1-z）Al_z）_（0.51）P / GaAs和InGaP / In_（0.49）（Ga_（1-z）Al_z）_（0.51）P多量子的光学性质分子束外延生长的孔
4. Photoluminescence investigation of InGaAs/InP quantum wells grown by gas-source molecular-beam epitaxy with source-supply interruption [C] . Hosomi, K., Mozume, Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on . 1995

机译：源间断气体源分子束外延生长InGaAs / InP量子阱的光致发光研究
5. Electrical, optical, and defect properties of carbon-doped gallium nitride grown by molecular-beam epitaxy. [D] . Armitage, Robert David. 2003

机译：通过分子束外延生长的碳掺杂氮化镓的电学，光学和缺陷性质。
6. Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling [O] . Eun-Hye Lee, Jin-Dong Song, Il-Ki Han, 2015

机译：位置可获取的低密度GaAs液滴外延量子点的结构和光学性质用于等离激元光学耦合的单光子源
7. Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy [O] . S. A. Lourenço, I. F. L. Dias, L. C. Poças, 2003

机译：温度对分子束外延生长的Gaassbn / GaAs单量子孔光学性质的影响
8. Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 (mu)m Fabry-Perot optical modulators [R] . Hammons, B E, Fritz, I J, Brennan, T M, 1992

机译：通过分子束外延生长的应变松弛InGaas缓冲层，用于1.3（μm）法布里 - 珀罗光调制器

Optical Properties of Quantum Wells Grown upon Gas Source Molecular-Beam EpitaxyLow-Temperature Buffers

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