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In(0.25)Ga(0.75)As/AlAs-Based Resonant Tunneling Diodes Grown on Prepatterned andNon-Patterned GaAs (100) Substrates

机译：在预图案化和非图案化Gaas（100）衬底上生长的（0.25）Ga（0.75）as / alas基谐振隧道二极管

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作者
Kapre, R.; Madhukar, A.; Guha, S.;
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年度 1990
页码
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor diodes; Tunneling(Electronics); Heterojunctions; Aluminum arsenides; Reprints;

机译：半导体二极管;隧道（电子）;异质结;砷化铝;重印;

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专利

1. In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs [J] . Kapre R., Madhukar A. IEEE Electron Device Letters . 1990,第6期

机译：在预图案化和非图案化GaAs上生长的基于In / sub 0.25 / Ga / sub 0.75 / As / AlAs的共振隧穿二极管
2. Critical layer thickness study in In_0.75Ga_0.25As/In_0.5Al_0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates [J] . Shin-ichiro Gozu, Tomohiro Kita, Tomoyuki Kikutani Journal of Crystal Growth . 2001,第期

机译：在GaAs衬底上生长的In_0.75Ga_0.25As / In_0.5Al_0.5As伪形谐振隧道二极管结构中的关键层厚度研究
3. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates [J] . Garcia I., Geisz J.F., France R.M., Journal of Applied Physics . 2014,第7期

机译：在GaAs衬底上生长的变质Ga 0.76 In 0.24 As / GaAs 0.75 Sb 0.25 隧道结
4. Critical layer thickness study in In_(0.75)Ga_(0.25)As/In_(0.5)Al_(0.5)As pseudomorphic resonant tunneling diode structure grown on GaAs substrates [C] . Syoji Yamada, Tomoyuki Kikutani, Tomohiro Kita, International conference on molecular beam epitaxy . 2001

机译：作为/ IN_（0.5）GA_（0.25）的临界层厚度研究在GaAs基板上生长的假形谐振隧道二极管结构，如/ in_（0.5）AS / IN_（0.5）AL_（0.5）
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate [O] . Kexiong Zhang, Hongwei Liang, Yang Liu, -1

机译：金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
7. Magneto-optical properties of single site-controlled InGaAsN quantum wires grown on prepatterned GaAs substrates [O] . Marco Felici, Giorgio Pettinari, Romain Carron, 2012

机译：在预先形成图案的GaAs衬底上生长的单点控制InGaAsN量子线的磁光特性
8. GaAs/In/sub 0.25/Ga/sub 0.75/As/GaAs, Modulation-Doped, Single, Strained Quantum-Well FET [R] . Zipperian, T. E., Drummond, T. J. 1985

机译：Gaas / In / sub 0.25 / Ga / sub 0.75 / as / Gaas，调制掺杂，单，应变量子阱FET

In(0.25)Ga(0.75)As/AlAs-Based Resonant Tunneling Diodes Grown on Prepatterned andNon-Patterned GaAs (100) Substrates

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