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Realization and Analysis of GaAs/AlAs/In(0.1)Ga(0.9)As Based Resonant TunnelingDiodes with High Peak-to-Valley Ratios at Room Temperature

机译：室温下具有高峰谷比的Gaas / alas / In（0.1）Ga（0.9）基谐振隧穿二极管的实现与分析

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作者
Kapre, R.; Madhukar, A.; Kaviani, K.; Guha, S.; Rajkumar, K. C.;
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年度 1990
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总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Tunneling(Electronics); Aluminum arsenides; Transfer functions; Reprints;

机译：砷化镓;隧道（电子）;砷化铝;传递函数;重印;

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专利

1. High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes [J] . Reddy V.K., Tsao A.J. Electronics Letters . 1990,第21期

机译：高峰谷电流比AlGaAs / AlAs / GaAs双势垒共振隧穿二极管
2. Spectroscopy of growth islands in GaAs/In0.1Ga0.9As/AlAs double-barrier structures from photoluminescence and resonant tunneling studies [J] . Gobato YG., Rivera PH., Schulz PA., Physical Review, B. Condensed Matter . 1999,第8期

机译：通过光致发光和共振隧穿研究GaAs / In0.1Ga0.9As / AlAs双势垒结构中生长岛的光谱
3. Spectroscopy of growth islands in GaAs/In0.1Ga0.9As/AlAs double-barrier structures from photoluminescence and resonant tunneling studies [J] . Gobato YG., Rivera PH., Schulz PA., Physical Review, B. Condensed Matter . 1999,第8期

机译：通过光致发光和共振隧穿研究GaAs / In0.1Ga0.9As / AlAs双势垒结构中生长岛的光谱
4. InP-BASED STRAINED In{sub}0.8Ga{sub}0.2As/AlAs RESONANT InP-BASED STRAINED In{sub}0.8Ga{sub}0.2As/AlAs RESONANT TUNNELING DIODES WITH HIGH PEAK-CURRENT DENSITY AND LARGE PEAK-TO-VALLEY CURRENT RATIO GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY [C] . Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, International Conference on Indium Phosphide and Related Materials . 2003

机译：基于INP的应变在{sub} 0.8ga} 0.2as / alas共振INP的{sub} 0.8ga {sub} 0.2as / alas谐振隧道二极管中具有高峰电流密度和大峰 - 由金属 - 有机气相外延生长的谷电流比
5. Second quantum state transition in GaAs/AlGaAs resonant Bragg structure probed by modulation reflectance spectroscopy. [D] . Chen, Yuechao. 2014

机译：通过调制反射光谱法探测GaAs / AlGaAs共振布拉格结构中的第二量子态跃迁。
6. Synthesis and Characterization of 40 wt Ce0.9Pr0.1O2–δ–60 wt NdxSr1−xFe0.9Cu0.1O3−δ Dual-Phase Membranes for Efficient Oxygen Separation [O] . Guoxing Chen, Zhijun Zhao, Marc Widenmeyer, 2020

机译：40wt％Ce0.9pr0.1O2-δ-60wt％ndxsr1-xfe0.9cu0.1o3-δ双相膜的合成与表征有效氧气分离
7. High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes [O] . Butun, B., Biyikli, N., Kimukin, I., 2004

机译：低温生长的基于GaAs的共振腔增强p–i–n光电二极管的高速1.55μm操作
8. High Peak-to-Valley Current Ratio In(0.22)Ga(0.78)As/AlAs RTDs on GaAs UsingRelaxed In(x)Ga(1-x)As Buffers [R] . Aggarwal, R. J., Fonstad, C. G. 1996

机译：使用放大的（x）Ga（1-x）as缓冲器在Gaas上的（0.22）Ga（0.78）as / alas RTD中的高峰谷电流比

Realization and Analysis of GaAs/AlAs/In(0.1)Ga(0.9)As Based Resonant TunnelingDiodes with High Peak-to-Valley Ratios at Room Temperature

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