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A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices.

机译：mIs器件中绝缘体 - 半导体界面电荷转移的直接隧道模型。

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A general model of charge transfer at the insulator-semiconductor interface of metal-insulator-semiconductor (MIS) devices is developed. The model is based upon direct WKB tunneling of electrons from the semiconductor substrate into localized trap states within the forbidden gap of the insulator. Both an arbitrary distribution of the insulator states in energy as well as spatial variation in the trap densities in the interface region are treated. Advantage is taken of the strong spatial decay of the tunneling transition probability to obtain valid approximate solutions of the tunneling equations in a form directly amenable to numerical evaluation. The effects of internal electric fields in the insulator are included in a self-consistent manner. The results of several representative model calculations of post-irradiation annealing and field-injection characteristics of MIS capacitors are described. (Author)

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McLean, F. B.;
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年度 1976
页码 1-50
总页数 50
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductors; Tunneling(Electronics); Radiation damage; Charge transfer; Insulation; Electrons; Interfaces; Capacitors; Theory; Annealing; Frequency response; Models; Metal insulator semiconductors; Electron tunneling; Trapped(Charged particles);

机译：半导体;隧道（电子）;辐射损伤;电荷转移;绝缘;电子;界面;电容器;理论;退火;频率响应;模型;金属绝缘体半导体;电子隧道;陷阱（带电粒子）;

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1. Intrinsic Charge Carrier Mobilities at Insulator-Semiconductor Interfaces Probed by Microwave-based Techniques: Studies with Liquid Crystalline Organic Semiconductors [J] . Sakurai Tsuneaki, Tsutsui Yusuke, Choi Wookjin, Chemistry Letters . 2015,第10期

机译：微波技术探测的绝缘体-半导体界面的本征载流子迁移率：液晶有机半导体的研究
2. Intrinsic Charge Carrier Mobilities at Insulator-Semiconductor Interfaces Probed by Microwave-based Techniques: Studies with Liquid Crystalline Organic Semiconductors [J] . Sakurai Tsuneaki, Tsutsui Yusuke, Choi Wookjin, Chemistry Letters . 2015,第10期

机译：微波技术探测的绝缘体-半导体界面上的本征载流子迁移率：液晶有机半导体的研究
3. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al_2O_3 or AlTiO gate dielectrics [J] . Son Phuong Le, Duong Dai Nguyen, Toshi-kazu Suzuki Journal of Applied Physics . 2018,第3期

机译：具有Al_2O_3或AlTiO栅极电介质的AlGaN / GaN金属-绝缘体-半导体器件中的绝缘体-半导体界面固定电荷
4. Physics of the metal-carbon nanotube interfaces: charge transfers, fermi-level "pinning" and application to the scanning tunneling spectroscopy [C] . Yongqiang Xue, Supriyo Datta International Conference on Nanotube . 2000

机译：金属 - 碳纳米管界面的物理学：电荷转移，FERMI级“钉扎”和应用于扫描隧道光谱
5. Apport de la microscopie a effet tunnel a la caracterisation d'interfaces molecule-metal a fort transfert de charge. [D] . Bedwani, Stephane. 2012

机译：隧道效应显微镜有助于高电荷转移的分子-金属界面的表征。
6. Evaluation of Intrinsic Charge Carrier Transport at Insulator-Semiconductor Interfaces Probed by a Non-Contact Microwave-Based Technique [O] . Yoshihito Honsho, Tomoyo Miyakai, Tsuneaki Sakurai, -1

机译：基于非接触微波技术的绝缘子-半导体界面本征载流子传输的评估
7. Modeling charge transfer at organic donor-acceptor semiconductor interfaces [O] . Cakir, Deniz, Bokdam, Menno, de Jong, Michel P, 2012

机译：模拟有机供体-受体半导体界面上的电荷转移

A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices.

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