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Performance of AlGaN/GaN High Electron Mobility Transistors with AlSiN Passivation

机译：具有alsiN钝化的alGaN / GaN高电子迁移率晶体管的性能

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This program was focused on the development of alternative and superior dielectric passivations to AlGaN/GaN HEMT transistors for mm- wave operation. A new process was developed to deposit by LPCVD the composite dielectric of AlSiN containing as much as 10 atomic % by weight of aluminum. This dielectric partially depletes the 2DEG which has be effectively used in place of a gate extension. The resulting devices do not display non-linear increases in access resistances, and they deliver state-of-the-art power performance at large drain bias at frequencies up to 10 and 35 GHz.

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作者
Harvard, E.; Brown, R.; Shealy, J. R.;
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年度 2010
页码 p.1-13
总页数 13
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Leakage(Electrical) ; Aluminum sulfate ; Aluminum gallium nitrides ; Gates(Circuits) ; Transistors ; Passivity ; High electron mobility transistors ; Nonlinear systems ; Display systems ; Performance(Engineering) ; State of the art ; Drainage;

机译：漏电（电气）;硫酸铝;氮化铝镓;栅极（电路）;晶体管;无源;高电子迁移率晶体管;非线性系统;显示系统;性能（工程）;现有技术;排水;

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专利

1. Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation [J] . Harvard E., Brown R., Shealy J. R. Electron Devices, IEEE Transactions on . 2011,第1期

机译：具有AlSiN钝化作用的AlGaN / GaN高电子迁移率晶体管的性能
2. Influence of A1N passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study [J] . P. Murugapandiyan, D. Nirmal, Md. Tanvir Hasan, Materials Science and Engineering . 2021,第Nova期

机译：A1N钝化对蓝宝石衬底AlGaN / GaN高电子迁移率晶体管热性能的影响：仿真研究
3. Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation [J] . Gengchang Zhu, Hanbin Wang, Yiming Wang, Applied Physics Letters . 2016,第11期

机译：通过热蒸发SiO钝化增强AlGaN / AlN / GaN高电子迁移率晶体管的性能
4. 440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth [C] . Harvard Ekaterina, Shealy James R. Device Research Conference (DRC), 2012 70th Annual . 2012

机译：具有40 GHz带宽的440 V AlSiN钝化的AlGaN / GaN高电子迁移率晶体管
5. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [D] . Ha, Minh-Trang Teresa. 2016

机译：在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
6. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts [O] . Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, 2018

机译：具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
7. Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation [O] . Zhu, Gengchang, Wang, Hanbin, Wang, Yiming, 2016

机译：通过热蒸发siO钝化提高alGaN / alN / GaN高电子迁移率晶体管的性能

Performance of AlGaN/GaN High Electron Mobility Transistors with AlSiN Passivation

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