ECR plasma synthesis of silicon nitride films on GaAs and InSb

机译：ECR等离子体合成Gaas和Insb上的氮化硅膜

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Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN(sub x)) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN(sub x) growth without an applied bias (ion energy (congruent)30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

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Barbour, J. C.; Lovejoy, M. L.; Ashby, C. I. H.; Howard, A. J.; Custer, J. S.;
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年度 1993
页码 1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium Arsenides ; Indium Antimonides ; Silicon Nitrides ; Deposition ; Films ; Passivation ; Substrates ; Surfaces;

机译：砷化镓;锑化铟;氮化硅;沉积;薄膜;钝化;基板;表面;

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1. Surface Passivation Of Ingap/gaas Hbt Using Silicon-nitride Film Deposited By Ecr-cvd Plasma [J] . L.T. Manera, L.B. Zoccal, J.A. Diniz, Applied Surface Science . 2008,第19期

机译：使用Ecr-Cvd等离子体沉积的氮化硅膜对Ingap / gaas Hbt进行表面钝化
2. Role of GaAs surface cleaning in plasma deposition of silicon nitride films for encapsulated annealing [J] . Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films . 1985,第3期

机译：GaAs表面清洁在氮化硅薄膜的等离子体沉积中的封装退火作用
3. Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas [J] . Sahu B. B., Shin Kyung S., Han Jeon G. Plasma Sources Science & Technology . 2016,第1期

机译：使用RF-UHF混合等离子体在PECVD中低温合成高质量氮化硅膜的集成方法
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机译：用于基于III / V的化合物半导体器件的应用，高密度ECR-等离子体沉积氮化硅膜
5. Design of atmospheric pressure plasma CVD process for deposition of silicon nitride thin films using dielectric barrier discharge. [D] . Hu, Shunfu. 2008

机译：大气压等离子体CVD工艺的设计，该工艺使用介电势垒放电沉积氮化硅薄膜。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition [O] . Zhenghao Gan, Changzheng Wang, Zhong Chen 2018

机译：等离子体增强化学气相沉积沉积氮化硅和氮氧化硅薄膜的材料结构和机械性能
8. ECR plasma synthesis of silicon nitride films on GaAs and InSb. [R] . Barbour, J. C., Lovejoy, M. L., Ashby, C. I. H., 1993

机译：ECR等离子体合成Gaas和Insb上的氮化硅膜。

ECR plasma synthesis of silicon nitride films on GaAs and InSb

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