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Stable a-Si:H-Based Multijunction Solar Cells with Guidance from Real-Time Optics. Final Report 17 July 1998-16 November 2001

机译:稳定的a-si:基于H的多结太阳能电池,具有实时光学指导。最终报告1998年7月17日至2001年11月16日

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New insights have been obtained into the growth of hydrogenated silicon films via real time spectroscopic ellipsometry (RTSE) measurments. Evolutionary phase diagrams were expanded to include the effects of different deposition conditions, including rf power, pressure, and temperature. Detailed studies of degradation kinetics in thin films and corresponding solar cells have been carried out. Both p-i-n and n-i-p solar cells that incorporate Si:H i-layers deposited with and without H2-dilution have been studied. For the first time, direct and reliable correlations have been obtained between the light-induced changes in thin film materials and the degradation of the corresponding solar cells. Previous studies of the evolution of the microstructural and optical properties with thickness in Si:H materials have been extended to include the effects that the optoelectronic properties and microstructure of the material exert on the solar cell characteristics.

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