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Integrated Platform for Testing MEMS Mechanical Properties at the Wafer Scale bythe IMaP Methodology

机译:通过Imap方法在晶圆尺度上测试mEms机械性能的集成平台

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A new instrument to accurately and verifiably measure mechanical propertiesacross an entire microelectromechanical systems (MEMS) wafer is under development. We have modified the optics on a conventional microelectronics probe station to enable three-dimensional imaging while maintaining the full working distance of a long working distance objective. This allows standard probes or probe cards to be used. We have proceeded to map out mechanical properties along a wafer column by the Interferometry for Material Property Measurement (IMaP) methodology. From interferograms of simple actuated cantilevers, out-of-plane deflection profiles at the nanometer scale are obtained. These are analyzed by integrated routines that extract basic mechanical properties such as Youngs modulus and cantilever curvature. Non-idealities such as support post compliance and beam take off angle are simultaneously quantified. Verifiability is achieved by comparing properties at multiple voltages. When the non-idealities are properly taken into account, we find that Youngs modulusE-161 GPa for polysilicon and is independent of wafer position. However, curvature and residual stress data correlate with wafer position.

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