Understanding Light-Induced Degradation of c-Si Solar Cells.

机译：了解光诱导的c-si太阳能电池降解。

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We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (964;) in sister wafers. We found that the recovery of 964; in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Si interface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation.

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Sopori, B.; Basnyat, P.; Shet, S.; Mehta, V.; Binns, J.;
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年度 2012
页码 1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Solar cells; Annealing; Carrier lifetime; Coatings; Defects; Degradation; Investigations; Oxygen; Recombination; Saturation; Surfaces; Thermal recovery;

机译：太阳能电池;退火;载体寿命;涂层;缺陷;降解;研究;氧气;重组;饱和度;表面;热回收;

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Understanding Light-Induced Degradation of c-Si Solar Cells.

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