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Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies

机译：对于先进的器件技术，在没有氢的情况下退火的Gaas，Inp和si的晶片键合

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In this paper the authors report on the direct bonding of compound semiconductors and silicon annealed at low temperatures (400 C) using hydrogen and nitrogen. Pressure and temperature relationships on interface characteristics were investigated with high resolution transmission electron microscopy and energy dispersive x-ray spectroscopy. It was found that no morphology differences existed between hydrogen and nitrogen annealed samples. applying the N(sub 2) bonding process, 850nm bottom emitting vertical cavity surface emitting lasers (VCSELs), were bonded to a transparent AlGaAs substrate. Finally, high anneal temperatures (up to 450 C) and shear stress values (> 1.6 MPa) were obtained for GaAs bonded to Si using a dry (plasma) activation technique.

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Roberds, B. E. ; Choquette, K. D. ; Geib, K. M. ; Kravitz, S. H. ; Twesten, R. D.;
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年度 1997
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Bonding; Semiconductor Materials; Semiconductor Devices; Pressure Dependence; Temperature Dependence; Controlled Atmospheres; Nitrogen; Hydrogen; Experimental Data; Meetings; Tables(data);

机译：键合;半导体材料;半导体器件;压力依赖性;温度依赖性;可控气氛;氮气;氢气;实验数据;会议;表格（数据）;

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专利

1. Molecular beam epitaxy of GaAs/A1GaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding [J] . Z.Hatzopoulos, D.Cengher, G.Deligeorgis Journal of Crystal Growth . 2001,第期

机译：利用GaAs-Si晶片键合在Si上集成光电器件的GaAs / AlGaAs外延结构的分子束外延
2. Ultrathin Body InGaAs-on-lnsulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding [J] . Masafumi Yokoyama, Hideki Takagi, Tetsuji Yasuda, Annales de l'I.H.P . 2011,第5期

机译：通过直接晶圆键合在Si衬底上具有InP钝化层的InInAs绝缘体超薄绝缘体金属氧化物半导体场效应晶体管
3. Room-temperature GaAs/InP wafer bonding with extremely low resistance [J] . Shiro Uchida, Tomomasa Watanabe, Hiroshi Yoshida, _Applied Physics Express . 2014,第11期

机译：电阻极低的室温GaAs / InP晶圆键合
4. Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation [C] . OptoElectronics and Communications Conference . 2009

机译：通过晶片粘接和氢诱导层剥离的INP / INGAAS / INP P-I-N光电二极管在硅上集成
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames [O] . Koki Tanaka, Hideki Hirano, Masafumi Kumano, 2018

机译：基于键合的晶片级真空封装使用原子氢预处理的铜键合框架
7. Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies [O] . Roberds, B.E., Choquette, K.D., Geib, K.M., 1997

机译：对于先进的器件技术，在没有氢的情况下退火的Gaas，Inp和si的晶片键合
8. Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies [R] . Roberds, B. E., Choquette, K. D., Geib, K. M., 1997

机译：对于先进的器件技术，在没有氢的情况下退火的Gaas，Inp和si的晶片键合

Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies

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