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首页> 美国政府科技报告 >Advanced materials development for multi-junction monolithic photovoltaic devices
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Advanced materials development for multi-junction monolithic photovoltaic devices

机译：多结单片光伏器件的先进材料开发

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We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs(sub x)Sb(sub l-x) (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

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