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High current density tunnel diodes for multi-junction photovoltaic devices on InP substrates

机译：在INP基板上的多结光伏器件的高电流密度隧道二极管

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摘要

InAlGaAs tunnel diodes, lattice-matched to InP and grown by molecular beam epitaxy, are demonstrated with peak tunneling current densities exceeding 1200 A/cm~2. This was achieved by a 20°C reduction in growth temperature for the p-type tunnel diode layers, resulting in up to two orders of magnitude improvement in the peak tunneling current density. Secondary ion mass spectrometry measurements reveal that the lower growth temperature reduces unwanted segregation of p-type Be dopants, improving dopant incorporation within the active tunnel diode layers. The diodes are transparent to wavelengths above 1000 nm and are compatible with the bottom junctions of InP-based multi-junction solar cells and with InP-based photonic power converters operating in the telecommunication O- and C-bands. When incorporated into a dual-junction photonic power converter test structure, measurements under 1319-nm laser illumination demonstrate integrated tunnel diode operation, enabling a halving of the short-circuit current and doubling of the open-circuit voltage as compared to a single junction reference device.
机译：inalgaas隧道二极管，用分子束外延的晶格匹配和由分子束外延生长，峰隧道电流密度超过1200a / cm〜2。这是通过对P型隧道二极管层的生长温度降低20°C来实现的，导致峰值隧道电流密度最多两大幅度提高。二次离子质谱测量揭示了较低的生长温度减少了p型掺杂剂的不希望的偏析，改善了主动隧道二极管层内的掺杂剂掺入。二极管对1000nm的波长是透明的，并且与基于INP的多结太阳能电池的底部结和基于INP的光子功率转换器兼容，在电信O-和C波段中操作。当结合到双结光电力转换器测试结构中时，在1319-nm激光照射下的测量显示了集成的隧道二极管操作，与单个结相比，可以减少短路电流和开路电压的加倍设备。

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  • 来源
    《Applied Physics Letters》 |2021年第6期|062101.1-062101.6|共6页
  • 作者

    M. N. Beattie; C. E. Valdivia; M. M. Wilkins; M.Zamiri; K. L. C. Kaller; M. C. Tarn; H.S.Kim; J.J.Krich; Z. R. Wasilewski; K. Hinzer;

  • 作者单位

    SUNLAB Centre for Research in Photonics University of Ottawa Ottawa Ontario K1N 6N5 Canada Department of Physics University of Ottawa Ottawa Ontario K1N 6N5 Canada;

    SUNLAB Centre for Research in Photonics University of Ottawa Ottawa Ontario K1N 6N5 Canada;

    SUNLAB Centre for Research in Photonics University of Ottawa Ottawa Ontario K1N 6N5 Canada;

    SUNLAB Centre for Research in Photonics University of Ottawa Ottawa Ontario K1N 6N5 Canada;

    SUNLAB Centre for Research in Photonics University of Ottawa Ottawa Ontario K1N 6N5 Canada;

    Department of Electrical and Computer Engineering University of Waterloo Waterloo Ontario N2L 3G1 Canada;

    Department of Electrical and Computer Engineering University of Waterloo Waterloo Ontario N2L 3G1 Canada;

    Department of Physics University of Ottawa Ottawa Ontario K1N 6N5 Canada;

    Department of Electrical and Computer Engineering University of Waterloo Waterloo Ontario N2L 3G1 Canada;

    SUNLAB Centre for Research in Photonics University of Ottawa Ottawa Ontario K1N 6N5 Canada Department of Physics University of Ottawa Ottawa Ontario K1N 6N5 Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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