Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

Zhang Y; Zeng YP; Ma L; Wang BQ; Zhu ZP; Wang LC; Yang FH

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Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

机译：纳米电子器件-通过分子束外延在InP衬底上生长的共振隧穿二极管，室温下峰谷比为17

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This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

机译：本文报道了通过分子束外延在InP衬底上生长了InAs / In0.53Ga0.47As / AlAs共振隧穿二极管。这些器件的峰谷电流比在300K时为17。对于具有十个单层AlAs势垒的二极管和具有四个InAs插入层四个单层的八个单层的In0.53Ga0.47As阱，已经获得了3kA / cm（2）的峰值电流密度。高分辨率透射电子显微镜已研究了生长中断对势垒界面的平滑作用。

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来源
《Chinese physics》 |2006年第6期|共4页
作者
Zhang Y; Zeng YP; Ma L; Wang BQ; Zhu ZP; Wang LC; Yang FH;
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正文语种 eng
中图分类物理学;
关键词
resonant tunnelling diode; InP substrate; molecular beam epitaxy; high resolution transmission electron microscope; CURRENT-VOLTAGE CHARACTERISTICS; INTRINSIC BISTABILITY; CIRCUIT;

机译：共振隧穿二极管;InP衬底;分子束外延;高分辨率透射电子显微镜;电流-电压特性;固有双稳性;电路;

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1. Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature [J] . Zhang Y, Zeng YP, Ma L, Chinese physics . 2006,第6期

机译：纳米电子器件-通过分子束外延在InP衬底上生长的共振隧穿二极管，室温下峰谷比为17
2. Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature [J] . Zhang Y, Zeng YP, Ma L, Chinese physics . 2006,第6期

机译：纳米电子器件-通过分子束外延在InP衬底上生长的共振隧穿二极管，室温下峰谷比为17
3. Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature [J] . Zhang Yang, Zeng Yi-Ping, Ma Long, 中国物理：英文版 . 2006,第006期

机译：纳米电子器件-分子束外延在InP衬底上生长的共振隧穿二极管，室温下峰谷比为17
4. InP-BASED STRAINED In{sub}0.8Ga{sub}0.2As/AlAs RESONANT InP-BASED STRAINED In{sub}0.8Ga{sub}0.2As/AlAs RESONANT TUNNELING DIODES WITH HIGH PEAK-CURRENT DENSITY AND LARGE PEAK-TO-VALLEY CURRENT RATIO GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY [C] . Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, International Conference on Indium Phosphide and Related Materials . 2003

机译：基于INP的应变在{sub} 0.8ga} 0.2as / alas共振INP的{sub} 0.8ga {sub} 0.2as / alas谐振隧道二极管中具有高峰电流密度和大峰 - 由金属 - 有机气相外延生长的谷电流比
5. Gallium arsenide grown by two molecular beam epitaxy techniques at reduced substrate temperatures. [D] . Zhang, Kai. 1993

机译：砷化镓通过两种分子束外延技术在降低的底物温度下生长。
6. Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy [O] . Yong-Jin Cho, Alex Summerfield, Andrew Davies, -1

机译：更正：高温分子束外延在石墨上生长的六角氮化硼隧道壁垒
7. Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature [O] . Zhang Y, Zeng YP, Ma L, 2006

机译：纳米电子器件-通过分子束外延在InP衬底上生长的共振隧穿二极管，室温下峰谷比为17
8. Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy [R] . Ohmori, K. , Hino, H. , Fujita, T. , 2006

机译：通过分子束外延在（775）B Inp衬底上生长的大量改进的自组织In（0.53）Ga（0.47）as量子线激光器

Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

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