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Statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells

机译：pECVD沉积参数对硅太阳电池表面和体相重组影响的统计分析

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We have performed a statistically designed multiparameter experiment using response surface methodology to determine the optimum deposition and anneal conditions for PECVD silicon-oxide and silicon-nitride films on Si solar cells. Our process includes a unique in situ hydrogen plasma treatment to promote bulk defect passivation independently of surface effects. Our goal has been to define a process to optimize cell performance by minimizing recombination while also providing an effective antireflection coating. Our initial results show that excellent emitter-surface passivation, approaching that of the best thermally grown oxides, can be obtained using a single-layer nitride coating whose refractive index is optimized for antireflection purposes. Use of the PECVD-nitride instead of a TiO(sub 2) ARC resulted in an 11% increase in output power.

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Ruby, D. S. ; Wilbanks, W. L. ; Fleddermann, C. B.;
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年度 1995
页码 1-9
总页数 9
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Silicon Solar Cells; Surface Treatments; Chemical Vapor Deposition; Computer-Aided Manufacturing; Computerized Simulation; Fabrication;

机译：硅太阳能电池;表面处理;化学气相沉积;计算机辅助制造;计算机模拟;制造;

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专利

1. Wet chemical oxidation of silicon surfaces prior to the deposition of all- PECVD AlOx/a-SiNx passivation stacks for silicon solar cells [J] . Laades A., Angermann H., Sperlich H.-P., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2013,第Null期

机译：在沉积用于硅太阳能电池的全PECVD AlOx / a-SiNx钝化叠层之前，先对硅表面进行湿式化学氧化
2. Bulk and Surface Passivation of Silicon Solar Cells Accomplished by Silicon Nitride Deposited on Industrial Scale by Microwave PECVD [J] . W. SOPPE, H. RIEFFE, A. WEEBER Progress in photovoltaics . 2005,第7期

机译：微波PECVD工业规模沉积氮化硅完成的硅太阳能电池的体积和表面钝化
3. Deposition of intrinsic hydrogenated amorphous silicon for thin-film solar cells - a comparative study for layers grown statically by RF-PECVD and dynamically by VHF-PECVD [J] . T. Zimmermann, A. J. Flikweert, T. Merdzhanova Progress in photovoltaics . 2014,第2期

机译：薄膜太阳能电池本征氢化非晶硅的沉积-通过RF-PECVD静态生长和通过VHF-PECVD动态生长的层的比较研究
4. A STATISTICAL ANALYSIS OF THE EFFECT OF PECVD DEPOSITION PARAMETERS ON SURFACE AND BULK RECOMBINATION IN SILICON SOLAR CELLS [C] . D. S. Ruby, W. L. Wilbanks, C. B. Fleddermann IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC . 1994

机译：PECVD沉积参数对硅太阳能电池表面和本体复合影响的统计分析
5. Surface and bulk passivation of multicrystalline silicon solar cells by silicon nitride (hydrogen) layer: Modeling and experiments. [D] . Li, Chuan. 2009

机译：氮化硅（氢）层对多晶硅太阳能电池的表面和整体钝化：建模和实验。
6. Phosphorescent Energy Downshifting for Diminishing Surface Recombination in Silicon Nanowire Solar Cells [O] . Hyun-Tak Kim, Kangmin Lee, Wonjoo Jin, -1

机译：磷光能降档可减少硅纳米线太阳能电池中的表面重组。
7. Bulk and Surface Passivation of Silicon Solar Cells Accomplished by Silicon Nitride Deposited on Industrial Scale by Microwave PECVD [O] . Prog Photovolt, Henk Rieffe, Arthur Weeber 2004

机译：采用微波pECVD工业规模沉积氮化硅制备硅太阳能电池的体积和表面钝化
8. Statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells [R] . Ruby, D. S., Wilbanks, W. L., Fleddermann, C. B. 1995

机译：pECVD沉积参数对硅太阳电池表面和体相重组影响的统计分析

Statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells

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