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Theory of insulated gate field effect transistor with negative differential electron mobility

机译：具有负微分电子迁移率的绝缘栅场效应晶体管理论

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We study the consequences of negative differential electron mobility in FETs using the field model and the gradual channel approximation. We find that the FET may show convective or absolute instability. The fluctuations growths is governed by diffusion law with negative effective diffusion coefficient. (author). 4 refs, 2 figs. (Atomindex citation 27:023378)

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作者
Furman, A. S.;
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年度 1995
页码 1-13
总页数 13
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field Effect Transistors; Absolute Instabilities; Convective Instabilities; Diffusion; Electric Fields; Electron Mobility; Fluctuations;

机译：场效应晶体管;绝对不稳定性;对流不稳定性;扩散;电场;电子迁移率;波动;

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专利

1. The separated shorted-anode insulated gate bipolar transistor transistor with the suppressed negative differential resistance regime [J] . D.S. Byeon, J.H. Chun, B.H. Lee Microelectronics Journal . 1999,第6期

机译：具有抑制的负微分电阻机制的分离式短路阳极绝缘栅双极晶体管晶体管
2. Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor [J] . Youichi Ashida, Shigeki Takahashi, Satoshi Shiraki, Japanese journal of applied physics . 2012,第4ISSUE2期

机译：提取增强型横向绝缘栅双极晶体管：一种超高速横向绝缘栅双极晶体管，优于横向双管扩散金属氧化物半导体场效应晶体管
3. Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (111) substrate with very thin SiO_2 gate dielectric [J] . M Lachab, M Sultana, H Fatima, Semiconductor science and technology . 2012,第12期

机译：具有非常薄的SiO_2栅极电介质的Si（111）衬底上的AlGaN / GaN绝缘栅高电子迁移率晶体管的直流性能和电流崩溃
4. Modeling the small signal characteristics of an ALD Al2O3 insulated-gate AlN/GaN high electron mobility transistor [C] . Deen David A., Champlain James G., Storm David F., International Semiconductor Device Research Symposium;ISDRS '09 . 2009

机译：模拟ALD Al 2 O 3 绝缘栅AlN / GaN高电子迁移率晶体管的小信号特性
5. The radio-frequency characteristics of insulated submicron-gate III-N heterostructure field-effect transistors. [D] . Tarakji, Ahmad Houssam. 2003

机译：绝缘亚微米栅极III-N异质结构场效应晶体管的射频特性。
6. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors [O] . Yuanjie Lv, Zhaojun Lin, Lingguo Meng, 2012

机译：栅极长度与漏极-源极距离之比对AlGaN / AlN / GaN异质结构场效应晶体管中电子迁移率的影响
7. Consequences of negative differential electron mobility in insulated gate field effect transistors [O] . Furman, A. S. 2006

机译：绝缘子中负微分电子迁移率的后果栅场效应晶体管
8. Negative Resistance of a Modified Insulated-Gate Field-Effect Transistor. [R] . Lehovec, K., Zuleeg, R. 1974

机译：改进的绝缘栅场效应晶体管的负阻。

Theory of insulated gate field effect transistor with negative differential electron mobility

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