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Irradiation tests of double-sided silicon strip detectors with a special guard ring structure

机译:具有特殊保护环结构的双面硅条探测器的辐照测试

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The results of the first irradiation tests of newly designed silicon microstrip detectors performed with 21 MeV protons at the Max-Planck-Institut in Heidelberg are presented. The detectors were developed and produced by the semiconductor laboratory of the Max-Planck-Institut in Munich. Novel guard ring structures allow operation of the detectors at voltages exceeding 300 V. (orig.)

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