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Knife-edge array field emission cathode

机译：刀口阵列场发射阴极

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摘要

many cathode applications require a new type of cathode that is able to produce short pulsed electron beams at high emission current. Gated field emitter arrays of micrometer size are recognized as candidates to meet this need and have become the research focus of vacuum microelectronics. Existing fabrication methods produce emitters that are limited either in frequency response or in current emission. One reason is that the structure of these emitters are not sufficiently optimized. In this study, the author investigated the factors that affect the performance of field emitters. An optimum emitter structure, the knife-edge field emitter array, was developed from the analysis. Large field enhancement factor, large effective emission area, and small emitter capacitance are the advantages of the structure. The author next explored various options of fabricating the knife-edge emitter structure. He proposed a unique thin film process procedure and developed the fabrication techniques to build the emitters on (110) silicon wafers. Data from the initial cathode tests showed very low onset voltages and Fowler-Nordheim type emission. Emission simulation based on the fabricated emitter structure indicated that the knife-edge emitter arrays have the potential to produce high performance in modulation frequency and current emission. Several fabrication issues that await further development are discussed and possible solutions are suggested.

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