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首页> 美国政府科技报告 >Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital Converters
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Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital Converters

机译：12位逐次逼近模数转换器中的总电离剂量效应

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Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.

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