首页> 美国政府科技报告 >Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

【24h】

Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

机译：skylab实验性能评估手册。附录J：实验m555砷化镓单晶生长（msFC）

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Analyses for Experiment M555, Gallium Arsenide Single Crystal Growth (MSFC), to be used for evaluating the performance of the Skylab corollary experiments under preflight, inflight, and post-flight conditions are presented. Experiment contingency plan workaround procedure and malfunction analyses are presented in order to assist in making the experiment operationally successful.

著录项

作者
Byers, M. S.;
展开▼
作者单位

展开▼
年度 1973
页码 1-87
总页数 87
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
CRYSTAL GROWTH; GALLIUM ARSENIDES; ORBITAL WORKSHOPS; SINGLE CRYSTALS; SKYLAB PROGRAM; EXPERIMENT DESIGN; MICROGRAVITY APPLICATIONS; OPERATIONS RESEARCH; PREFLIGHT OPERATIONS; SPACE COMMERCIALIZATION;

机译：晶体生长; GaLLIUm aRsENIDEs;轨道工作坊;单晶; sKYLaB计划;实验设计;微重力应用;行动调查;预防运营;空间商业化;

相似文献

外文文献
中文文献
专利

1. Selective growth experiments on gallium arsenide (100) surfaces patterned using UV-nanoimprint lithography [J] . A. Tukiainen, J. Viheriaelae, T. Niemi, Microelectronics journal . 2006,第12期

机译：使用紫外纳米压印光刻在砷化镓（100）表面上进行选择性生长实验
2. Preparation of single-source precursors to nanocrystalline gallium arsenide and gallium antimonide. X-ray crystal structures of [Et_2GaAs(SiMe_3)_2]_2, [Et_2GaSb(SiMe_3)_2]_2 and Et_2GaAs(SiMe_3)_2Ga(Et)_2Sb(SiMe_3)_2 [J] . Edward E. Foos, Richard J. Jouet, Richard L. Wells, Journal of Organometallic Chemistry . 1999,第1期

机译：制备纳米晶砷化镓和锑化镓的单源前体。 [Et_2GaAs（SiMe_3）_2] _2，[Et_2GaSb（SiMe_3）_2] _2和Et_2GaAs（SiMe_3）_2Ga（Et）_2Sb（SiMe_3）_2的X射线晶体结构
3. Heterosegregation on the Surface of a Gallium Arsenide Single Crystal: Gallium Nitride Phase Formation in Nitrogen-and Argon-Gas Flows [J] . Yu. Ya. Tomashpolsky, V. M. Matyuk, N. V. Sadovskaya Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2015,第3期

机译：砷化镓单晶表面上的异质聚集：氮气和氩气流中氮化镓相的形成
4. Small angle scattering experiments on annealed gallium arsenide single crystal wafers [C] . Herms, M., Goperigk, . 1998

机译：退火砷化镓单晶晶片的小角度散射实验
5. Aluminum gallium arsenide-indium gallium arsenide crystal growth, buried tunnel contact lasers, wafer bonding, and alluminum gallium arsenide oxide-based VCSELs. [D] . Evans, Peter Weindel. 1998

机译：砷化铝镓-砷化镓镓晶体生长，埋入式隧道接触激光器，晶片键合以及基于砷化镓铝氧化物的VCSEL。
6. The Role of Geometrically Necessary Dislocations in Cantilever Beam Bending Experiments of Single Crystals [O] . Edgar Husser, Swantje Bargmann 2017

机译：几何必要位错在单晶悬臂梁弯曲实验中的作用
7. Studies of the Vaporization Mechanism of Gallium Arsenide Single Crystals [O] . C. Y. Lou, G. A. Somorjai 1971

机译：砷化镓单晶的汽化机制研究

Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

摘要

著录项

相似文献

相关主题

期刊订阅