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Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

机译：通过反应溅射在Si（110）衬底上生长的Inn薄膜的特征

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Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy, and X-ray diffraction techniques. The optical properties of InN layers were examined by micro-Raman and Fourier transform infrared (FTIR) reflectance spectroscopy at room temperature. Structural analysis specified nanocrystalline structure with crystal size of 15.87 nm, 16.65 nm, and 41.64 nm for InN films grown at N2 : Ar ratio of 100 : 0, 75 : 25, and 50 : 50, respectively. The Raman spectra indicates well defined peaks at 578, 583, and 583 cm−1, which correspond to the A1(LO) phonon of the hexagonal InN films grown at gas ratios of 100 : 0, 75 : 25 and 50 : 50 N2 : Ar, respectively. Results of FTIR spectroscopy show the clearly visible TO [E1(TO)] phonon mode of the InN at 479 cm−1 just for film that were deposited at 50 : 50 N2 : Ar. The X-ray diffraction results indicate that the layers consist of InN nanocrystals. The highest intensity of InN (101) peak and the best nanocrystalline InN films can be seen under the deposition condition with N2 : Ar gas mixture of 50 : 50.
机译：通过在环境温度下通过反应性溅射和纯度沉积在Si（110）上沉积氮化铟（INN）薄膜。通过使用扫描电子显微镜，能量分散X射线光谱，原子力显微镜和X射线衍射技术来研究Ar-N2溅射气体混合物对膜的结构性质的影响。通过在室温下通过微拉曼和傅里叶变换红外（FTIR）反射光谱检查套间层的光学性质。结构分析规定的纳米晶体结构具有15.87nm，16.65nm和41.64nm的晶体尺寸，其在N 2：Ar比例为100：0,75：25和50：50的IS薄膜。拉曼光谱表明578,583和583cm-1处的良好定义的峰，其对应于在100：0,75：25和50：50：50n2的气体比下生长的六角形薄膜的A1（LO）声子孔：分别。 FTIR光谱的结果显示在沉积在50：50 n2：AR的薄膜的479cm-1中的[E1（to）] inn的[E1（to）]声子模式清晰可见。 X射线衍射结果表明该层由Inn纳米晶体组成。在沉积条件下，可在沉积条件下看到最高的INN（101）峰值和最佳纳米晶型薄膜的强度，N 2：Ar气体混合物为50：50。

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