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首页> 外文期刊>Journal of nanomaterials >Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering
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Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

机译：反应溅射法在Si（110）衬底上生长InN薄膜的表征

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摘要

Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar-N_2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy, and X-ray diffraction techniques. The optical properties of InN layers were examined by micro-Raman and Fourier transform infrared (FTIR) reflectance spectroscopy at room temperature. Structural analysis specified nanocrystalline structure with crystal size of 15.87 nm, 16.65 nm, and 41.64 nm for InN films grown at N_2/Ar ratio of 100/0, 75/25, and 50/50, respectively. The Raman spectra indicates well defined peaks at 578, 583, and 583 cm~(-1), which correspond to the A_1 (LO) phonon of the hexagonal InN films grown at gas ratios of 100 : 0, 75 : 25 and 50 : 50 N_2 : Ar, respectively. Results of FTIR spectroscopy show the clearly visible TO [E_1(TO)] phonon mode of the InN at 479 cm~(-1) just for film that were deposited at 50 : 50 N_2 : Ar. The X-ray diffraction results indicate that the layers consist of InN nanocrystals. The highest intensity of InN (101) peak and the best nanocrystalline InN films can be seen under the deposition condition with N_2/Ar gas mixture of 50 : 50.
机译：在室温下，通过反应溅射和纯In靶将氮化铟（InN）薄膜沉积到Si（110）上。利用扫描电子显微镜，能量色散X射线能谱，原子力显微镜和X射线衍射技术研究了Ar-N_2溅射气体混合物对薄膜结构性能的影响。在室温下通过显微拉曼和傅立叶变换红外（FTIR）反射光谱法检查了InN层的光学性能。结构分析指定了分别以100 / 0、75 / 25和50/50的N_2 / Ar比生长的InN膜的纳米晶体结构，其晶体大小分别为15.87 nm，16.65 nm和41.64 nm。拉曼光谱表明在578、583和583 cm〜（-1）处有明确定义的峰，这些峰对应于以100：0、75：25和50:20的气体比率生长的六方InN薄膜的A_1（LO）声子。 50 N_2：Ar。 FTIR光谱结果表明，InN在479 cm〜（-1）处的TO [E_1（TO）]声子模态清晰可见，仅适用于在50：50 N_2：Ar下沉积的薄膜。 X射线衍射结果表明该层由InN纳米晶体组成。在N_2 / Ar气体混合物为50:50的沉积条件下，可以看到最高强度的InN（101）峰和最佳的纳米晶InN膜。

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