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The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

机译：栅极介电质量对在200mm Si衬底上开发无金的D型和E型凹栅AlGaN / GaN晶体管的影响

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status: published

机译：状态：已发布

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Wu Tian-Li; Marcon Denis; De Jaeger Brice; Van Hove Marleen; Bakeroot Benoit; Lin Dennis; Stoffels Steve; Kang Xuanwu; Roelofs Robin; Groeseneken Guido; Decoutere Stefaan;
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年度 2015
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1. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al_2O_3 gate dielectrics [J] . J. W. Roberts, P. R. Chalker, K. B. Lee, Applied Physics Letters . 2016,第7期

机译：通过原子层沉积Al_2O_3栅电介质的原位氟掺杂来控制E模式和D模式硅基GaN硅金属绝缘体半导体异质结构场效应晶体管中的阈值电压
2. Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200mm Si substrates [J] . Ronchi Nicolo, De Jaeger Brice, Van Hove Marleen, Japanese journal of applied physics . 2015,第4s期

机译：结合等离子体增强原子层沉积栅极电介质和原位SiN覆盖层，可降低200mm Si衬底上AlGaN / GaN高电子迁移率晶体管的阈值电压漂移和动态导通电阻色散
3. The Recessed Trapezoidal Groove Dual-Gate AlGaN/ GaN E-Mode Transistor by Using Depletion Enhancement Effect [J] . Ling Yang, Minhan Mi, Bin Hou, Physica status solidi . 2018,第10期

机译：利用耗尽增强效应的嵌入式梯形凹槽双栅AlGaN / GaN E型晶体管
4. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate [C] . Tian-Li Wu, Marcon Denis, De Jaeger Brice, Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs . 2015

机译：栅极介电质量对在200mm Si衬底上开发无金的D型和E型凹栅AlGaN / GaN晶体管的影响
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al 2 O 3 gate dielectrics [O] . Roberts, JW, Chalker, PR, Lee, KB, 2016

机译：通过原子层沉积Al 2 O 3栅极电介质的原位氟掺杂，控制E模式和D模式硅基GaN硅金属绝缘体半导体异质结构场效应晶体管中的阈值电压
8. Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing. [R] . Wallace, R. M. 2015

机译：利用无缺陷栅极凹陷和激光退火改善alGaN / GaN / si mOsFET的器件性能和可靠性。

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

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