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Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching

机译：通过电感耦合等离子体刻蚀和快速湿法刻蚀制备高品质因子GaAs / InAsSb光子晶体微腔

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The authors demonstrate high quality factor GaAs-based L9 photonic crystal microcavities (PCMs) with embedded InAsSb quantum dots with emission in 1.3¿¿m at room temperature. The fabrication process uses reactive ion beam etching with a CHF3/N2 gas mixture and reactive ion etching with a BCl3/N2 gas mixture to form PCMs on air-suspended slabs. An optimum N2 partial flux content of 0.65 and a successful removal of deposits formed during the membrane release by a fast wet etching in HF provide optical quality factors (Q-factors) as high as ~30 000.

机译：作者展示了具有嵌入的InAsSb量子点的高质量因子基于GaAs的L9光子晶体微腔（PCM），在室温下的发射波长为1.3μm。该制造工艺使用CHF3 / N2气体混合物进行反应离子束刻蚀，以及BCl3 / N2气体混合物进行反应离子刻蚀，以在空气悬浮的平板上形成PCM。最佳的N2分通量含量为0.65，并且通过HF快速湿法蚀刻成功去除膜释放过程中形成的沉积物，可提供高达约30,000的光学质量因子（Q因子）。

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作者
Prieto-González Iván; Muñoz-Camuñez Luis Enrique; González Taboada Alfonso; Robles Urdiales Carmen; Ripalda José María; Postigo Pablo Aitor;
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年度 2016
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正文语种 eng
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1. Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching [J] . R. Zhang, Z. Ren, S. Yu Journal of Vacuum Science & Technology . 2008,第2期

机译：级联反应离子刻蚀/电感耦合等离子体刻蚀InGaAsP / InP双浅脊矩形环形激光光子集成电路的制备与表征
2. Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching [J] . R. Zhang, Z. Ren, S. Yu Journal of Vacuum Science & Technology . 2008,第2期

机译：级联反应离子刻蚀/电感耦合等离子体刻蚀InGaAsP / InP双浅脊矩形环形激光光子集成电路的制备与表征
3. Fabrication of high quality factor photonic crystal microcavities in InAsP/InP membranes combining reactive ion beam etching and reactive ion etching [J] . L. J. Martinez, I. Prieto, B. Alen, Journal of Vacuum Science & Technology . 2009,第4期

机译：结合反应离子束刻蚀和反应离子刻蚀在InAsP / InP膜中制造高质量因子光子晶体微腔
4. Cl/sub 2//O/sub 2/- and Cl/sub 2//N/sub 2/-based inductively coupled plasma etching of photonic crystals in InP: sidewall passivation [C] . van der Heijden, R., Carlstrom, Indium Phosphide and Related Materials, 2005. International Conference on . 2005

机译：基于Cl / sub 2 // O / sub 2 /-和基于Cl / sub 2 // N / sub 2 /的InP中光子晶体的电感耦合等离子体刻蚀：侧壁钝化
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

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7. Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching [O] . Chen A., Chua Soo-Jin, Wang B., 2006

机译：电感耦合等离子体刻蚀制备alGaInp / GaInp膜中的二维光子晶体

Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching

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