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PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE, AND METHOD FOR PRODUCING PHOTONIC CRYSTAL
PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE, AND METHOD FOR PRODUCING PHOTONIC CRYSTAL
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机译:等离子刻蚀方法,等离子刻蚀装置以及制造光子晶体的方法
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摘要
A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.
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