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PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE, AND METHOD FOR PRODUCING PHOTONIC CRYSTAL

机译:等离子刻蚀方法,等离子刻蚀装置以及制造光子晶体的方法

摘要

A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.
机译:提供了一种能够以高的纵横比和高的均匀性进行倾斜蚀刻的等离子体蚀刻方法。在等离子蚀刻方法中,通过以下步骤蚀刻高纵横比的基体:电场控制装置具有沿从基体的法线向表面倾斜的方向贯通的离子导入孔。放置在该基体表面上或上方。在基体表面上或在其上放置电场控制的位置会产生等离子体。在等离子体与基体之间形成电势差,以将等离子体中的离子吸引向基体。

著录项

  • 公开/公告号US2011151673A1

    专利类型

  • 公开/公告日2011-06-23

    原文格式PDF

  • 申请/专利权人 SUSUMU NODA;SHIGEKI TAKAHASHI;

    申请/专利号US200913061252

  • 发明设计人 SHIGEKI TAKAHASHI;SUSUMU NODA;

    申请日2009-08-27

  • 分类号H01L21/3065;C23F1/08;H01L21/00;G02B1/12;

  • 国家 US

  • 入库时间 2022-08-21 18:13:54

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