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Improved Photoelectrochemical Performance Of Cu(In,Ga)Se2 Thin Films Prepared By Pulsed Electrodeposition

机译：脉冲电沉积制备的Cu（In，Ga）Se2薄膜的光电化学性能得到改善

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摘要

Solar cells based on polycrystalline Cu(In,Ga)Se2 absorber layers have yielded the highest conversion efficiency among all the thin-film technologies. CIGS thin-films possess large optical absorption coefficient (≈105 cm-1) and a suitable bandgap of ≈ 1.20 eV for an ideal stoichiometry of CuIn0.7Ga0.3Se2. In the present study, Direct Current (DC) and Pulsed Current (PC) electrodeposition techniques are employed to obtain the near ideal stoichiometric CIGS thin-films on a Mo foil using a two electrode system at a constant potential. Deposited films are annealed at 550 °C under Ar atmosphere. Characterization of the annealed CIGS films is performed using SEM-energy dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy, and photoelectrochemistry to study the morphology, stoichiometry, phase constitution, and the photoelectrochemical response. PC deposition offered suitable manipulation of various parameters, which has helped in obtaining a better quality stoichiometric single phase chalcopyrite structured CIGS thin films with the elimination of unwanted secondary phases like Cu2-xSe. An improved photoelectrochemical performance, characteristic of a p-type semiconductor, is observed for the PC deposited CIGS films
机译：在所有薄膜技术中，基于多晶Cu（In，Ga）Se2吸收层的太阳能电池的转换效率最高。 CIGS薄膜具有较大的光吸收系数（≈105cm-1），对于CuIn0.7Ga0.3Se2的理想化学计量，其能带隙约为1.20 eV。在本研究中，采用直流（DC）和脉冲电流（PC）电沉积技术在恒定电压下使用双电极系统在Mo箔上获得接近理想的化学计量CIGS薄膜。沉积的薄膜在Ar气氛下于550°C退火。使用SEM能量色散X射线光谱，X射线衍射，拉曼光谱和光电化学对退火的CIGS膜进行表征，以研究其形态，化学计量，相组成和光电化学反应。 PC沉积提供了对各种参数的适当控制，这有助于获得质量更高的化学计量单相黄铜矿结构CIGS薄膜，并且消除了诸如Cu2-xSe的有害二级相。对于PC沉积的CIGS膜，观察到p型半导体具有改善的光电化学性能

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