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Highly (100)-oriented Eu-doped PZT thin films on sol-gel derived (100)-textured LaNiO3/Si substrates

机译：溶胶-凝胶衍生的（100）纹理的LaNiO3 / Si衬底上的高度（100）取向的Eu掺杂PZT薄膜

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(100)-oriented LaNiO3 (LNO) thin films were grown on Si substrates by a sol-gel method followed by a rapid thermal process at temperatures ranging from 650°C to 800°C. The films produced at 700°C had a resistivity of 1.79mΩm and could be used as bottom electrodes in the fabrication of ferroelectric capacitors on Si. Subsequently, a sol-gel derived Eu-doped Pb(Zr0.52,Ti0.48)O3 (PEZT) thin film with a thickness of 130 nm prepared on the LNO electrode was found to have a (100)-oriented texture. Possible reasons for the high degree of (100) orientation in PEZT thin films are given. Good ferroelectric performance was obtained for Au/PEZT/LNO capacitors. The remnant polarization (2P r) was found to be 22 μC/cm2 at a coercive electric field (Ec) of 134 kV/cm. After 1011 polarization reversals, Pr decreased by only 15%.

机译：（100）取向的LaNiO3（LNO）薄膜通过sol-gel方法在Si衬底上生长，然后在650°C至800°C的温度范围内进行快速热处理。在700°C下生产的薄膜的电阻率为1.79mΩm，可用作在Si上制造铁电电容器的底部电极。随后，发现在LNO电极上制备的厚度为130nm的溶胶-凝胶衍生的Eu掺杂的Pb（Zr0.52，Ti0.48）O3（PEZT）薄膜具有（100）取向的织构。给出了PEZT薄膜中高度（100）取向的可能原因。 Au / PEZT / LNO电容器获得了良好的铁电性能。发现在134 kV / cm的矫顽电场（Ec）下，剩余极化（2P r）为22μC/ cm2。在1011极化反转之后，Pr仅降低了15％。

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Yu YJ; Wang FP; Chan HLW; Zhao LC;
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年度 2004
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1. Highly (100)-oriented Eu-doped PZT thin films on sol-gel derived (100)-textured LaNiO_3/Si substrates [J] . Y.J.YU, F.P. WANG, H.L.W. CHAN, Applied Physics. A, Materials Science & Processing . 2004,第5期

机译：溶胶-凝胶衍生的（100）纹理的LaNiO_3 / Si衬底上的高度（100）取向的Eu掺杂PZT薄膜
2. Microstructure and transport properties of sol-gel derived highly (100)-oriented lanthanum nickel oxide thin films on SiO_2/Si substrate [J] . M.W. Zhu, ZJ. Wang, Y.N. Chen, Journal of Crystal Growth . 2011,第1期

机译：SiO_2 / Si基体上溶胶-凝胶衍生的高度（100）取向的氧化镧镧镍薄膜的微观结构和传输性能
3. Growth of highly (100)-oriented Zr-rich PZT films on Pt/Ti/SiO_2/Si substrates by a sol-gel process [J] . XIAORONG FU, ZHITANG SONG, CHENGLU LIN Ferroelectrics: Letters Section . 2001,第1a4期

机译：通过溶胶-凝胶工艺在Pt / Ti / SiO_2 / Si衬底上生长高度（100）取向的富Zr PZT薄膜
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机译：用（111）和（100）纹理的溶胶 - 凝胶衍生锆钛酸铅薄膜电性能的厚度依赖性
5. A study of the stability of ultra thin films of rhodium deposited on silver(100), gold deposited on copper(100), and gold deposited on silicon(100). [D] . Yang, Gimo. 1994

机译：研究了银（100）上沉积的铑，铜（100）上沉积的金和硅（100）上沉积的金的超薄膜的稳定性。
6. Growth and characterization of textured well-faceted ZnO on planar Si(100) planar Si(111) and textured Si(100) substrates for solar cell applications [O] . Chin-Yi Tsai, Jyong-Di Lai, Shih-Wei Feng, 2017

机译：用于太阳能电池应用的平面Si（100）平面Si（111）和带纹理的Si（100）衬底上具有良好刻面的带纹理的ZnO的生长和表征
7. Highly (100)-oriented Eu-doped PZT thin films on sol-gel derived (100)-textured LaNiO3/Si substrates [O] . Yu YJ, Wang FP, Chan HLW, 2004

机译：溶胶-凝胶衍生的（100）纹理的LaNiO3 / Si衬底上的高度（100）取向的Eu掺杂PZT薄膜
8. Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates. [R] . Mhin, S., Nittala, K., Lee, J., 2014

机译：pt基底上化学衍生pZT薄膜的相和纹理演变。

Highly (100)-oriented Eu-doped PZT thin films on sol-gel derived (100)-textured LaNiO3/Si substrates

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