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A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

机译：正栅偏置应力下非晶铟镓锌氧化物薄膜晶体管阈值电压漂移的热能分析

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This is the author accepted manuscript. The final version is available from AIP Publishing via http://dx.doi.org/10.1063/1.4943249

机译：这是作者接受的手稿。最终版本可从AIP Publishing通过http://dx.doi.org/10.1063/1.4943249获得

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Niang Kham Man; Barquinha PMC; Martins RFP; Cobb B; Powell MJ; Flewitt Andrew John;
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年度 2016
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1. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress [J] . K. M. Niang, P. M. C. Barquinha, R. F. P. Martins, Applied Physics Letters . 2016,第9期

机译：正栅偏置应力下非晶铟镓锌氧化物薄膜晶体管阈值电压漂移的热能分析
2. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination [J] . A. J. Flewitt, M. J. Powell Journal of Applied Physics . 2014,第13期

机译：同时负栅极偏置和照明条件下非晶铟镓锌氧化物薄膜晶体管阈值电压漂移的热能分析
3. Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors [J] . Jeong Chan-Yong, Kim Hee-Joong, Hong Sae-Young, Japanese journal of applied physics . 2017,第8期

机译：非晶态铟镓锌氧化物薄膜晶体管中正偏压下阈值电压漂移的时效两阶段统一拉伸指数模型
4. AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications [C] . Chao-Yu Yang, Shih-Che Huang, Hao-Lin Chiu, SID International Symposium . 2012

机译：AC栅极 - 漏极偏压对GOA应用的非晶铟镓锌氧化锌晶体管的偏压研究
5. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors [D] . Bharadwaj, Anish Suresh. 2018

机译：关于偏压应力施加对非晶铟 - 镓 - 锌 - 氧化锌薄膜晶体管的可逆效应
6. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment [O] . Ching-Lin Fan, Fan-Ping Tseng, Chiao-Yuan Tseng 2018

机译：CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
7. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination [O] . Flewitt Andrew John, Powell MJ 2014

机译：同时负栅极偏置和照明条件下非晶铟镓锌氧化物薄膜晶体管阈值电压漂移的热能分析

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

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