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Current versus voltage characteristics of GaN/AlGaN/GaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure

机译：在静水压力下具有变化的AlGaN厚度和成分的GaN / AlGaN / GaN双异质结构的电流与电压特性

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摘要

We have studied current versus voltage characteristics of n-GaN∕u-AlGaN∕n-GaN double heterostructure devices under hydrostatic pressure up to 500MPa. Devices were grown on c-plane sapphire substrates by organometallic vapor phase epitaxy using epitaxial layer overgrowth. The effect of AlGaN layer thickness and composition on the pressure sensitivity was investigated. For a fixed applied bias, we found that the current decreases approximately linearly in magnitude with increasing hydrostatic pressure over the range of voltages and pressures applied. The decrease in current magnitude can be attributed to piezoelectric effects and is consistent with model calculations. The polarizationcharge densities at the GaN∕AlGaN interfaces change with hydrostatic pressure, which in turn modifies the internal potential barrier. Changes in the AlGaN layer thickness and composition also modify the interfacial polarization, with thicker AlGaN layers and higher AlN content increasing the effect of pressure on the observed current versus voltage characteristics. The strain gauge factors obtained for these devices range from ∼200 to 800.
机译：我们研究了在500MPa静水压力下n-GaN ∕ u-AlGaN ∕ n-GaN双异质结构器件的电流与电压特性。使用外延层过度生长，通过有机金属气相外延在c面蓝宝石衬底上生长器件。研究了AlGaN层的厚度和组成对压力敏感性的影响。对于固定的施加偏置，我们发现电流在施加的电压和压力范围内随着静水压力的增加而在大小上呈线性下降。电流幅度的减小可归因于压电效应，并且与模型计算一致。 GaN ∕ AlGaN界面处的极化电荷密度随静水压力而变化，从而改变了内部势垒。 AlGaN层厚度和组成的变化也改变了界面极化，随着AlGaN层的增加和AlN含量的增加，压力对观察到的电流与电压特性的影响也会增加。这些设备获得的应变仪系数约为200至800。

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