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Influence of Carbon Addition on the Electrical and Structural Properties of Phosphorus and Boron Doped Silicon Layers

机译：添加碳对磷和硼掺杂硅层电学和结构性质的影响

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A. R. Mitchell; D. F. Griffiths; In quot; S. G. Liu; E. C. Douglas; C. P. Wu; C. W. Magee; S. Y. Narayan; S. T. Jolly; F. Kolondra; W. A. P. Claassen; J. Bloem; F. H. P. M. Habraken;
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1. Photoelectrical properties of pulsed laser deposited boron doped p-carbon-silicon and phosphorus doped n-carbon/p-silicon heterojunction solar cells [J] . M. Rusop, X.M. Tian, S.M. Mominuzzaman, Solar Energy . 2005,第3期

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2. Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers [J] . D. Briand, M. Sarret, P. Duverneuil, Journal de Physique, IV: Proceedings of International Conference . 1995,第5aPta2期

机译：掺杂气体对生长速率轴向均匀性和LPCVD原位掺杂多晶硅层电学性能的影响
3. Electrical and structural properties of boron and phosphorus co-doped diamond films [J] . X.J.Hu, R.B.Li, H.S.Shen, Carbon: An International Journal Sponsored by the American Carbon Society . 2004,第8a9期

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4. Doping and structural properties of the phosphorus doped polysilicon layers used for micromechanical applications [C] . Florin Gaiseanu, Jaume Esteve, Carles Cane, Conference on Micromachining and Microfabrication Process Technology . 1999

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5. The influence of ohmic metals and oxide deposition on the structure and electrical properties of multilayer epitaxial graphene on silicon carbide substrates. [D] . Maneshian, Mohammad Hassan. 2011

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6. Toward Defect-Free Doping by Self-Assembled MolecularMonolayers: The Evolution of Interstitial Carbon-Related Defects inPhosphorus-Doped Silicon [O] . Xuejiao Gao, Bin Guan, ⊥, 2019

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8. Slack-Quenched Properties of Low Alloy Medium Carbon Steels with Boron, Rare Earths and Silicon Additions [R] . Cvikevich, S. 1960

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Influence of Carbon Addition on the Electrical and Structural Properties of Phosphorus and Boron Doped Silicon Layers

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