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Structural, electrical and optical properties of transparent conducting Si-doped ZnO thin films grown by pulsed laser deposition

机译：通过脉冲激光沉积生长的透明导电si掺杂ZnO薄膜的结构，电学和光学性质

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摘要

Thin silicon doped zinc oxide films were ablated onto borosilicate glass substrates by pulsed laser deposition of a bulk ZnO target doped with 2 wt% silicon. The rotating target was irradiated at low ambient oxygen pressures by a KrF Excimer laser (Lambda physics LPX 300) emitting pulses of 0.18 ns in length, with frequency of 10 Hz, at a wavelength of 248 nm and with energy fluence of 1-2 J/cm2. The temperature of the substrate was changed from room temperature to 500˚C at the fixed oxygen pressure of 5 mTorr. The partial oxygen pressure was varied from 0.01 to 500 mTorr at the substrate temperature of 300˚C. The growth rate was differed by varying target-to-substrate distance from 50 to 70 mm at 5 mm increment. The films were characterised by atomic force microscopy, Hall effect measurements, ellipsometry, laser microscope, X-ray diffraction, spectrophotometry, four point probe and scanning electron microscopy. Deposition parameters such as, the substrate temperature, oxygen pressure, target-to-substrate distance and the number of pulses were varied to maximise optical transmittance and minimise resistivity. The optimum deposition circumstances yielded a film of resistivity of 4.12×10-4 Ωcm and a transmittance of 89%.
机译：通过脉冲激光沉积掺杂有2 wt％硅的块状ZnO靶，在硅酸硼玻璃衬底上烧蚀掺杂硅的氧化锌薄膜。用KrF准分子激光（Lambda physics LPX 300）在低环境氧气压力下对旋转的靶进行辐照，该激光发射长度为0.18 ns，频率为10 Hz，波长为248 nm，能量通量为1-2 J的脉冲/平方厘米。在5 mTorr的固定氧气压力下，将基板温度从室温更改为500°C。在300°C的基板温度下，分氧压在0.01至500 mTorr之间变化。通过以5 mm的增量将目标到基板的距离从50 mm更改为70 mm，可以使生长速率有所不同。通过原子力显微镜，霍尔效应测量，椭圆光度法，激光显微镜，X射线衍射，分光光度法，四点探针和扫描电子显微镜对膜进行表征。改变沉积参数，例如衬底温度，氧气压力，靶到衬底的距离和脉冲数，以最大化光学透射率和最小化电阻率。在最佳沉积条件下，薄膜的电阻率为4.12×10-4Ωcm，透射率为89％。

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    Fereshteh Saniee Nessa;

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  • 年度 2010
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