首页> 外国专利> PASSIVATION-LAYER-FORMING COMPOSITION SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER SOLAR-CELL ELEMENT METHOD FOR MANUFACTURING SOLAR-CELL ELEMENT AND SOLAR CELL

PASSIVATION-LAYER-FORMING COMPOSITION SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER SOLAR-CELL ELEMENT METHOD FOR MANUFACTURING SOLAR-CELL ELEMENT AND SOLAR CELL

机译：具有钝化层的组合物具有制造钝化层的半导体衬底的方法具有制造钝化层的材料具有制造钝化层的太阳能电池的太阳电池单元

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摘要

General formula (I): The composition for forming a passivation layer containing a compound represented by _M (OR ¹⁾_m. In the formula, M contains at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, and each R ¹ independently represents an alkyl group having 1 to 8 carbon atoms or an aryl having 6 to 14 carbon atoms. Group, and m represents the integer of 1-5.]

机译：通式（I）：用于形成钝化层的组合物，其包含由_{M （OR ^{1） _{m表示的化合物。 M包含选自Nb，Ta，V，Y和Hf中的至少一种金属元素，并且每个R ^{1 独立地表示具有1至8个碳原子的烷基或具有6个碳原子的芳基。到14个碳原子组，m表示1-5的整数。]}}}}

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公开/公告号KR102083249B1

专利类型
公开/公告日2020-03-02

原文格式PDF
申请/专利权人 히타치가세이가부시끼가이샤;
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申请/专利号KR20157002949
发明设计人 아다치 슈이치로;요시다 마사토;노지리 다케시;구라타 야스시;다나카 도루;오리타 아키히로;하야사카 쓰요시;핫토리 다카시;마쓰무라 미에코;와타나베 게이지;모리시타 마사토시;하마무라 히로타카;
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申请日2013-07-19
分类号H01L31/0216;H01L31/18;
国家 KR
入库时间 2022-08-21 11:05:15

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