- STRAIN-RELAXING METHODS AND METHODS OF FORMING STRAIN-RELAXED SEMICONDUCTOR LAYERS AND SEMICONDUCTOR DEVICES USING THE SAME AND RELATED SEMICONDUCTOR STRUCTURES

• 1. 形成经松弛半导体材料层、半导体结构、装置的方法及包含经松弛半导体材料层、半导体结构、装置的工程衬底 [P] . 中国专利： CN102239538A . 2011-11-09
• 2. 在应变松弛缓冲层上方形成应变外延半导体材料的方法 [P] . 中国专利： CN105551931B . 2019.06.14
• 3. STRAIN-RELAXING METHODS AND METHODS OF FORMING STRAIN-RELAXED SEMICONDUCTOR LAYERS AND SEMICONDUCTOR DEVICES USING THE SAME AND RELATED SEMICONDUCTOR STRUCTURES [P] . 韩国专利： KR20150110377A . 2015-10-02

  机译： 应变松弛方法以及使用相同和相关的半导体结构形成应变松弛的半导体层和半导体器件的方法

• 4. Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices [P] . 美国专利： US9343303B2 . 2016-05-17

  机译： 在晶格不匹配的衬底上形成低缺陷应变松弛层的方法以及相关的半导体结构和器件

• 5. METHODS OF FORMING LOW-DEFECT STRAIN-RELAXED LAYERS ON LATTICE-MISMATCHED SUBSTRATES AND RELATED SEMICONDUCTOR STRUCTURES AND DEVICES [P] . 美国专利： US2015270120A1 . 2015-09-24

  机译： 在晶格错位的基体上形成低缺陷应变松弛层的方法以及相关的半导体结构和器件

• 1. Computerized FDTD Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication [J] . Phyo Sandar Win, Hsu Myat Tin Swe, Hla Myo Tun 计算机科学研究(英文) . 2021,第002期
• 2. FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE [J] . Yuan Yirang 数学物理学报（英文版） . 2005,第003期
• 3. IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE [J] . 陈蔚 数学物理学报（英文版） . 2003,第003期
• 4. Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods [J] . Alpatov A. V., Vikhrov S. P., Rybina N. V. Semiconductors . 2015,第4期
• 5. Development and Application of Instrumental Methods for Strain Analysisof Semiconductor Layers and Devices [J] . Dimitra Papadimitriou, Efthymios Liarokapis, Wolfgang Richter Microchimica Acta . 2001,第3a4期
• 6. Development and Application of Instrumental Methods for Strain Analysis of Semiconductor Layers and Devices [J] . Dimitra Papadimitriou, Efthymios Liarokapis, Wolfgang Richter Mikrochimica Acta: An International Journal for Physical and Chemical Methods of Analysis . 2001,第3a4期
• 7. Advanced optical methods for patterning of photonic structures in photoresist, Ⅲ-V semiconductors and PMMA [C] . Dusan Pudis, Eubos Suslik, Ivana Kubicova, Slovak-Czech-Polish optical conference on wave and quantum aspects of contemporary optics . 2011
• 8. Novel layered semiconductor quantum structures in new material systems --- III-nitride quantum cascade emitters and detectors, light emission in Fe:ZnSe with quantum cascade laser pumping, theoretical methods with real-time Green's functions, and hyperbolic metamaterials. [D] . Song, Yu. 2014
• 9. Semiconductors: High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017) [O] . Wen Li, Fengning Guo, Haifeng Ling, 2017
• 10. THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP [O] . B. A. Shangereeva 2013
• 11. Methods of Fabricating Gallium Nitride Semiconductor Layers on Substrates Including Non-Gallium Nitride Posts, and Gallium Nitride Semiconductor Structures Fabricated Thereby. [R] . Linthicum, K. J., Gehrke, T., Davis, R. F. 2005

• 1. Applications of Secondary Electron Composition Contrast Imaging Method in Microstructure Studies on Heterojunction Semiconductor Devices and Multilayer Materials [J] . 刘安生 ,邵贝羚 ,安生 . 稀有金属：英文版 . 1999,第2期
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• 4. 应变调控压电半导体器件的理论研究 [A] . 雒璐 . 2018