STRAIN-RELAXING METHODS AND METHODS OF FORMING STRAIN-RELAXED SEMICONDUCTOR LAYERS AND SEMICONDUCTOR DEVICES USING THE SAME AND RELATED SEMICONDUCTOR STRUCTURES

• 1. 形成经松弛半导体材料层、半导体结构、装置的方法及包含经松弛半导体材料层、半导体结构、装置的工程衬底 [P] . 中国专利： CN102239538A . 2011-11-09
• 2. 在应变松弛缓冲层上方形成应变外延半导体材料的方法 [P] . 中国专利： CN105551931B . 2019.06.14
• 3. - STRAIN-RELAXING METHODS AND METHODS OF FORMING STRAIN-RELAXED SEMICONDUCTOR LAYERS AND SEMICONDUCTOR DEVICES USING THE SAME AND RELATED SEMICONDUCTOR STRUCTURES [P] . 韩国专利： KR102067424B1 . 2020-01-20

  机译： -应变松弛方法和使用相同和相关的半导体结构形成应变松弛的半导体层和半导体器件的方法

• 4. Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices [P] . 美国专利： US9343303B2 . 2016-05-17

  机译： 在晶格不匹配的衬底上形成低缺陷应变松弛层的方法以及相关的半导体结构和器件

• 5. METHODS OF FORMING LOW-DEFECT STRAIN-RELAXED LAYERS ON LATTICE-MISMATCHED SUBSTRATES AND RELATED SEMICONDUCTOR STRUCTURES AND DEVICES [P] . 美国专利： US2015270120A1 . 2015-09-24

  机译： 在晶格错位的基体上形成低缺陷应变松弛层的方法以及相关的半导体结构和器件

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