首页> 外国专利> Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structure

Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structure

机译：具有单原子终止结构的离子源和电子源，具有单原子终止结构的尖端，气体场离子源，聚焦离子束设备，电子源，电子显微镜，掩模修复设备以及具有单原子终止的尖端的制造方法结构体

页面导航

摘要
著录项
相似文献

摘要

Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).

机译：本发明提供一种尖端，该尖端能够反复再生仅由一个原子形成的末端的单原子终止结构。具有单原子终止结构的尖端（ 1 ）包括：由第一金属材料制成的细线构件（ 2 ）;和由第二金属材料制成的突出部分（ 4 ），其至少形成在所述金属薄片的远端部分（ 2 a ）中。细线成员（ 2 ），并且其末端仅以一个原子终止;供给部（ 5 ）由第二金属材料构成，并被供给到形成在前端部（ 4 ）附近的突出部（ 4 ）。细线成员（ 2 ）的 2 a ）。 展开▼

著录项

公开/公告号US10529531B2

专利类型

公开/公告日2020-01-07

原文格式PDF

申请/专利权人 HITACHI HIGH-TECH SCIENCE CORPORATION;
展开▼

申请/专利号US201816203078

发明设计人 CHUHEI OSHIMA;MASAHIKO TOMITORI;ANTO YASAKA;TATSUYA SHIMODA;
展开▼

申请日2018-11-28

分类号H01J37;H01J37/08;H01J37/28;H01J37/305;H01J37/30;H01J37/21;H01J37/252;

国家 US

入库时间 2022-08-21 11:18:59

相似文献

专利

外文文献

中文文献

1. 具有双热电子源的离子源及其热电子产生方法 [P] . 中国专利： CN107633992B . 2020.07.28

2. 具有双热电子源的离子源及其热电子产生方法 [P] . 中国专利： CN107633992A . 2018-01-26

3. ION SOURCE AND ELECTRON SOURCE HAVING SINGLE-ATOM TERMINATION STRUCTURE, TIP HAVING SINGLE-ATOM TERMINATION STRUCTURE, GAS FIELD ION SOURCE, FOCUSED ION BEAM APPARATUS, ELECTRON SOURCE, ELECTRON MICROSCOPE, MASK REPAIR APPARATUS, AND METHOD OF MANUFACTURING TIP HAVING SINGLE-ATOM TERMINATION STRUCTURE [P] . 美国专利： US2019164719A1 . 2019-05-30

机译：具有单原子终止结构的离子源和电子源，具有单原子终止结构的尖端，气场离子源，聚焦离子束装置，电子源，电子显微术，膜修复方法和膜修复方法结构体

4. ION SOURCE AND ELECTRON SOURCE HAVING MONOATOMIC TERMINATION STRUCTURE, TIP HAVING MONOATOMIC TERMINATION STRUCTURE, GAS FIELD IONIZATION ION SOURCE, FOCUSED ION BEAM DEVICE, ELECTION SOURCE, ELECTRON MICROSCOPE, MASK CORRECTION DEVICE, AND METHOD OF PRODUCING TIP HAVING MONOATOMIC TERMINATION STRUCTURE [P] . 日本专利： JP2019102242A . 2019-06-24

机译：具有单原子终止结构的离子源和电子源，具有单原子终止结构的尖端，气场电离离子源，聚焦离子束设备，电离源，电子显微术，膜校正方法，膜校正方法

5. IRIDIUM TIP, GAS FIELD ION SOURCE, FOCUSED ION BEAM APPARATUS, ELECTRON SOURCE, ELECTRON MICROSCOPE, ELECTRON BEAM APPLICATION ANALYZING APPARATUS, ION ELECTRON COMPLEX BEAM APPARATUS, SCANNING PROBE MICROSCOPE, AND MASK REPAIRING APPARATUS [P] . 韩国专利： KR20150018400A . 2015-02-23

机译：铱离子，气态离子源，聚焦离子束装置，电子源，电子显微镜，电子束应用分析装置，离子电子复合束装置，扫描探针显微镜和面膜修复装置

1. Preliminary analysis of back-streaming electrons on the source plasma region of ion sources for the EAST-NBI [J] . Chundong HU, Minashan WU, Yahong XIE, 等离子体科学和技术（英文版） . 2017,第004期

2. Beam and image experiment of beam deflection electron gun for distributed X-ray sources [J] . Cheng-Jun Tan, Cong Xu, Chuan-Xiang Tang, 核技术（英文版） . 2019,第003期

3. Array Shape Estimation Using Partitioned Eigenstructure Method with Sources in Unknown Localizations [J] . Changgeng Shuai, Shike Zhang, Jiaxuan Yang, 声音与振动(英文) . 2018,第004期

4. Electrostatic-Instabilities as a Source of Picosecond Termination of Runaway-Electrons Beam in High-Voltage Gas-Filled Ultra-Fast Diode [J] . Mikhail M. TSVENTOUKH, Vadim G. MESYATS, A. BARENGOLTS Sergey Plasma and Fusion Research . 2010,第1期

5. Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In_(0.2)Ga_(0.8)As/GaAs high electron mobility transistor structures [J] . H. Q. Zheng, S. F. Yoon, B. P. Gay, Journal of Crystal Growth . 2000,第1a4期

6. Optimization of In_xGa_1-xAs/In_yal_1-yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy [J] . H.P.zheng, K.Radahakrishnan, S.F.Yoon Journal of Vacuum Science & Technology. B . 2001,第2期

7. Periodic structures manufactured by 3D printing for electron beam excitation of high power microwave sources [C] . A. R. Phipps, A. J. MacLachlan, L. Zhang, 2017 IEEE 21st International Conference on Pulsed Power . 2017

8. A focused transport approach to interstellar pickup ion acceleration at the solar wind termination shock: The role of a fluctuating magnetic field and termination shock structure [D] . Ye, Junye. 2016

9. Solving X-ray protein structures without a crystal: using X-ray Free Electron Laser the fourth generation synchrotron light sources [O] . Bo Huang 2010

10. Periodic structures manufactured by 3D printing for electron beam excitation of high power microwave sources [O] . A. R. Phipps, A. J. MacLachlan, L. Zhang, 2017

11. High-Throughput Line-Source Electron Beam Processing of Silicon-on-Insulator Structures for Microelectronics [R] . Palkuti, L. J. , Pang, C. S. 1982

1. Discharge Stabilization and Obtaining of Quasi-Stationary Electron Beams in Explosive-Emission Sources [J] . Eduard N. Abdullin ,Gennady P. Bazhenov ,Alexander V. Morozov . 能源与动力工程 . 2012,第008期

2. A small electron beam ion trap/source facility for electroneutral-ion collisional spectroscopy in astrophysical plasmas [J] . Gui-Yun Liang ,Xin-Wen Ma ,Gang Zhao . 天文和天体物理学研究 . 2018,第001期