SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm

• 1. 用于小于20nm的鳍间距的新的自对准四重图案化工艺 [P] . 中国专利： CN109716528A . 2019-05-03
• 2. 使用切割图案掩模来制造面积减小的集成电路（IC）单元的修改的自对准四重图案化（SAQP）工艺 [P] . 中国专利： CN110178222A . 2019-08-27
• 3. Self-aligned quadruple patterning process for Fin pitch below 20nm [P] . 美国专利： US10559501B2 . 2020-02-11

  机译： 用于20nm以下鳍距的自对准四重图案化工艺

• 4. Novel self-aligned quadruple patterning process for fin pitch below 20nm [P] . 日本专利： JP2019530229A . 2019-10-17

  机译： 鳍间距小于20nm的新型自对准四重图案化工艺

• 5. NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20NM [P] . 欧洲知识产权局专利： EP3516695A1 . 2019-07-31

  机译： 鳍距小于20NM的新型自对准四重图案化过程

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